IRG4PH50SPBF Allicdata Electronics
Allicdata Part #:

IRG4PH50SPBF-ND

Manufacturer Part#:

IRG4PH50SPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 57A 200W TO247AC
More Detail: IGBT 1200V 57A 200W Through Hole TO-247AC
DataSheet: IRG4PH50SPBF datasheetIRG4PH50SPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 200W
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 33A, 5 Ohm, 15V
Td (on/off) @ 25°C: 32ns/845ns
Gate Charge: 167nC
Input Type: Standard
Switching Energy: 1.8mJ (on), 19.6mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
Current - Collector Pulsed (Icm): 114A
Current - Collector (Ic) (Max): 57A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IRG4PH50SPBF IGBT is part of the Planar™ totem-pole series, which offers low electromagnetic interference, low power loss, and low drainage. This power transistor is an insulated gate bipolar transistor (IGBT) with a totem-pole gate structure that can handle heavy loads. It is designed for switching circuit applications and power devices such as electrical relays, heaters, solenoids, and motors.

The IRG4PH50SPBF IGBT has a peak collector current of 500 amperes and a collector-emitter voltage of 600 volts. It is designed to operate in a highly efficient manner, allowing it to be used in applications that require a low drain voltage. This device has a high switching frequency and a low on-state voltage drop, which allows for increased system efficiency. In addition, its high-speed performance ensures optimal switching and improved system response times.

The IRG4PH50SPBF IGBT consists of an N-channel insulated gate and a P-channel insulated gate. These two transistor gates are connected in series, forming a totem-pole configuration. This configuration effectively reduces the on-state voltage drop of the IGBT and allows for higher switching speed and greater current capacity.

The IRG4PH50SPBF IGBT works by allowing current to flow between its two transistor gates when a voltage is applied across them. This voltage causes the N-channel gate to turn on, allowing current to flow. The P-channel gate then forces current to return to the transistor source. This switching action controls the device’s current flow, which can be used to turn devices or appliances on or off.

The IRG4PH50SPBF IGBT is widely used in a variety of applications, from power utilisation to switchgear and motor control. Its high current capacity and low voltage drop provide increased system efficiency and improved response times in applications that require high speed switching. The device is also designed to be resistant to electromagnetic interference, making it ideal for use in environments where EMI is a concern.

The IRG4PH50SPBF IGBT is a reliable and efficient device that provides superior performance in a wide range of applications. Its low power losses and low EMI design make it well suited for use in high-power applications such as motor control and switchgear. Its high switching frequency and low voltage drop also make it ideal for use in applications that require fast response times.

The specific data is subject to PDF, and the above content is for reference

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