IRGP20B60PDPBF Allicdata Electronics
Allicdata Part #:

IRGP20B60PDPBF-ND

Manufacturer Part#:

IRGP20B60PDPBF

Price: $ 2.97
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 40A 220W TO247AC
More Detail: IGBT NPT 600V 40A 220W Through Hole TO-247AC
DataSheet: IRGP20B60PDPBF datasheetIRGP20B60PDPBF Datasheet/PDF
Quantity: 5
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.69640
10 +: $ 2.41920
100 +: $ 1.98236
500 +: $ 1.68755
1000 +: $ 1.42323
Stock 5Can Ship Immediately
$ 2.97
Specifications
Power - Max: 220W
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 42ns
Test Condition: 390V, 13A, 10 Ohm, 15V
Td (on/off) @ 25°C: 20ns/115ns
Gate Charge: 68nC
Input Type: Standard
Switching Energy: 95µJ (on), 100µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Current - Collector Pulsed (Icm): 80A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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IRGP20B60PDPBF is an insulated gate bipolar transistor (IGBT). It is considered to be a type of field-effect transistor (FET) because it has a voltage input and currents output. An IGBT utilizes three terminals and it is classified as either an n-type or p-type transistor. IRGP20B60PDPBF belongs to the p-type category, and it can be used in a variety of applications.

The IRGP20B60PDPBF is suitable for use in a range of different applications, including motor controls and high frequency power supplies. This type of transistor is commonly used in applications that require high current and voltage abilities. For example, it can be used to control the speed of electric motors, as well as to power electric components such as audio amplifiers, air conditioners and computers. Furthermore, it is often utilized in the development of energy-saving devices due to its ability to switch currents on and off quickly.

The IRGP20B60PDPBF transistor contains two isolated regions, namely the collector and the emitter. The collector terminal is where the incoming current enters the transistor, and the emitter terminal is where the current exits the transistor. A voltage is applied to the base terminal, which alters the flow of current between the two other terminals. This voltage is varied in order to control the flow of current. As such, the IRGP20B60PDPBF is capable of amplifying and switching currents.

In order for the IRGP20B60PDPBF to be able to switch currents on and off, it has an internal layer of semiconductor material between the collector and emitter. This material is called the base. The base acts like a physical barrier that prevents the flow of current through the transistor. When a voltage is applied to the base terminal, however, the base layer becomes thin, allowing current to flow through the collector and emitter. This process is reversed when the voltage is taken away, and the base acts as a barrier again, which effectively switches the current off.

The IRGP20B60PDPBF transistor is widely used in many types of electrical and electronic components. It is an efficient and reliable component that is capable of handling high voltages and currents, and it has low power loss. Furthermore, it is capable of amplifying and switching currents at fast speeds, making it ideal for use in many different applications. It is also quite robust, and can withstand harsh conditions.

The specific data is subject to PDF, and the above content is for reference

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