IRGP4066DPBF Allicdata Electronics
Allicdata Part #:

IRGP4066DPBF-ND

Manufacturer Part#:

IRGP4066DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 140A 454W TO247AC
More Detail: IGBT Trench 600V 140A 454W Through Hole TO-247AC
DataSheet: IRGP4066DPBF datasheetIRGP4066DPBF Datasheet/PDF
Quantity: 42
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 42Can Ship Immediately
Specifications
Power - Max: 454W
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 155ns
Test Condition: 400V, 75A, 10 Ohm, 15V
Td (on/off) @ 25°C: 50ns/200ns
Gate Charge: 150nC
Input Type: Standard
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Current - Collector Pulsed (Icm): 225A
Current - Collector (Ic) (Max): 140A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IRGP4066DPBF is a single, 600V, 4.2A hi-rel N-channel IGBT designed for use in various high voltage applications. Its fast switching capability and low on-resistance make it ideal for a wide range of applications, such as motor drives, lighting ballasts, and HVAC systems. The IRGP4066DPBF is offered in a TO-247 package and is built using advanced trench gate technology. This ensures low on-state resistance and higher stability.

The IRGP4066DPBF can be used in high voltage applications such as motor drives, HVAC systems, solar power systems, and power converters. It can also be used in lighting ballasts, such as fluorescent and HID ballasts. The fast switching capability of the IGBT makes it ideal for a wide range of applications. Additionally, the low on-resistance enables excellent current handling capabilities, which makes it perfect for high load applications.

The working principle of the IRGP4066DPBF is based on the basic principles of an Insulated Gate Bipolar Transistor (IGBT). The device is composed of two N-type semiconductor layers that form the body of the IGBT. The outermost layer is the N-type emitter, while the inner layer is the P-type base. The IGBT is turned on or off by applying a voltage to the gate. When a voltage is applied, current flows through the gate-emitter junction, which allows current to flow through the emitter-base junction. This in turn allows current to flow through the collector-base junction, thus completing the circuit.

Furthermore, the IRGP4066DPBF IGBT also offers a low gate-threshold voltage, which allows for fast switching times. This makes it ideal for applications where the power needs to be switched on and off quickly. Additionally, the device offers high current rating and high breakdown voltage, making it perfect for applications that require high voltage and high current.

In conclusion, the IRGP4066DPBF offers excellent performance in various high voltage applications. The device is built using advanced trench gate technology, which ensures low on-state resistance and higher stability. Additionally, the IGBT offers low gate-threshold voltage, allowing for fast switching times, and has high current rating and high breakdown voltage, making it perfect for high voltage and high current applications. All these features make the IRGP4066DPBF a reliable and perfect choice for multiple applications.

The specific data is subject to PDF, and the above content is for reference

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