IRGP4660DPBF Discrete Semiconductor Products

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The IRGP4660DPBF is an IGBT with a single gate driver circuit. This type of transistor is usually used in applications that require high switching frequencies and high voltage control. This IGBT can handle temperatures up to 225 degrees Celsius, making it robust and ideal for applications with extreme conditions.

Features and Specifications

The IRGP4660DPBF offers excellent voltage withstand characteristics, low switching losses and maximum ratings of 600V and 15A. It also offers a rated gate current of 2.5A, gate threshold voltage of 1.7V and saturation voltage drop of 1.8V. The voltage drop across the device is only 5mV. In addition, the device has a maximum junction temperature of 225 degrees Celsius and an RDS (on) of 0.45Ohm. Other features include: an anti-parallel diode, wide operating temperature range (-55 to 125 degrees Celsius), an IEC61508 Rated VCE(sat) of 1.8V, a low gate drive power dissipation of 1.5W, 600V avalanche capability and UL/VDE certified quality.

Applications

The IRGP4660DPBF is well suited for use in a variety of applications. These include AC motor control, industrial motor drives, UPSs, home appliances, programmable logic controllers, lighting control and Uninterruptible Power Supplies (UPS) systems. It can be used in any application that requires a high voltage/high current switching device. This includes switching relays, solenoids and motor starters. Additionally, this IGBT can be used for Snubberless applications and AC line switching. Its low gate threshold voltage and low saturation voltage make it suitable for low voltage high current applications.

Working Principle

The IRGP4660DPBF is a type of Insulated-Gate Bipolar Transistor (IGBT). IGBTs have an insulated gate that enables the transistor to act as either an n-channel or p-channel MOSFET, depending on the bias applied to the gate. The gate of the IGBT is made of a dielectric material, usually silicon dioxide, and is insulated from the other elements in the transistor. This enables the gate voltage to control the current flow through the transistor. When the gate voltage is low, the transistor behaves like a p-channel MOSFET, allowing current to flow from the drain to the source. When the gate voltage is high, the transistor behaves like an n-channel MOSFET, allowing current to flow from the source to the drain. The voltage rating for the IGBT depends on the voltage applied to the gate.

The IRGP4660DPBF is a high voltage single IGBT with its maximum ratings at 600V and 15A. It is mainly used for switching applications and its robust construction enables it to withstand high temperatures. The low gate drive power dissipation, high voltage capability and low saturation voltage make it ideal for a wide range of applications.

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