IRGP4740DPBF

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The IRGP4740DPBF is a continuously improved IGBT device designed for low switching losses, higher current overloads, increased ruggedness and improved reliability. This device is manufactured using base IGBT technology and is available in both TO-220, DPAK and D2PAK packaging. It is suitable for all types of industrial, commercial and residential applications.

An IGBT is a form of power semiconductor, which consists of insulated gate and bipolar transistors. This device has the advantages of both, the fast switching speed of a MOSFET together with the higher blocking voltage capability of a bipolar transistors. This type of transistors can be used for high power applications designed for relatively low switching frequencies. They are popularly used in applications like motor control, UPS solutions, lighting control, mobile devices, appliances and home automation systems.

The IRGP4740DPBF is a N channel IGBT that provides a low Vcesat of 2.8 volts when conducting, enabling greater than 85% efficiency and improved reliability in the applications. This IGBT has the highest current rating among the IRGP series. It has an operating voltage of 400 V and a drain to source current of 47 A. It has a low on-state voltage of 2.5 V and a maximum junction temperature of 150°C. This device has moderate switching speed with a turn-on time of 12 us and a turn-off time of 5 us.

In terms of performance features, the IRGP4740DPBF provides the inrush current control and short circuit protection functions. These features help protect the circuit parts from the current flowing into the circuit. In terms of thermal characteristics, the device is equipped with an isolated heat sink and a thermal protection function. This eliminates the need for an external heat sink in applications where high power is used.

The IRGP4740DPBF has a wide range of application fields from motor control, UPS solutions, lighting control, home automation systems, mobile devices to appliances. It is designed for relatively low switching frequencies and provides high power applications with increased durability.

In terms of working principle, the IRGP4740DPBF employs the principle of using two p-channel devices, or a MOSFET Plus a p-channel device, in a push-pull configuration. A high-frequency gate drive is applied to the gate of the MOSFET and p-channel devices, respectively. This causes the gate voltage to rise in the positive direction and cause conduction current to flow across the collector to emitter path of the internal transistors, thus causing the IGBT to turn on.

The IGBT can then be turned off by applying a negative voltage to the gate of the MOSFET, while the positive voltage remains applied to the gate of the p-channel device. This causes the gate voltage to dip in the negative direction and the conduction current to stop flowing across the collector to emitter path of the internal transistors, thus causing the IGBT to turn off.

In conclusion, the IRGP4740DPBF is a continuously improved IGBT device featuring low Vcesat of 2.8 volts, high current rating, low on-state voltage and good thermal characteristics. It is suitable for motor control, UPS solutions, lighting control, home automation systems, mobile devices and appliances. In terms of working principle, it employs a push-pull configuration using two p-channel devices, or a MOSFET plus a p-channel device, to turn on and off.

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