IRGP4690D-EPBF

IRGP4690D-EPBF Application Field and Working Principle

IRGP4690D-EPBF is a type of Insulated Gate Bipolar Transistor (IGBT) and a member of a family of products designed by Infineon Technologies designed to work in various applications requiring power switching. It is rated at 600V and adopted using the Direct Copper Bonding and Fieldstop technology. This makes this kind of transistor ideal for many of the modern applications such as Solar Inverters, UPS, Motor Control, Welding, Lighting, and Power Supplies.

Basically, IGBTs are a combination of Field Effect Transistor (FET) and Bipolar Junction Transistor (BJT). An IGBT, just like an FET, comprises of Semicon layer, with the Gate terminal as the control input and the Collector and Emitter being the output, on the other hand, just like an BJT it has three terminals, i.e., the Emitter, Base and Collector. IGBTs work on the principle of the Gate terminal controlling the Bipolar Junction between the Emitter and Collector, hence controlling the current flow between the two.

The IRGP4690D-EPBF IGBT is suited for applications that demand robust power switching, high efficiency and gate noise conditions. The product strikes the perfect balance between the turn-on and turn-off times and requires minimal drive power and gate current (1.5mA typical, 2.5mA Max.).

The IRGP4690D-E provides a low VCE(sat) of 1.9V typ. which enables an increased efficiency and power density of the power converters. The IRGP4690D-EPBF features a high static maximum blocking voltage, working at up to 600V with a high current carrying capacity, of 15A limited by temperature, currently the highest offered within the 900V to 1200V application space.

A key component of the IRGP4690D-EPBF IGBT is the Field-Stop techinique, which signifigantly increases the Safe Operating Area (SOA). This means that the IGBT can handle higher current compared to a similar device without Field-Stop. This greatly increases the power handling capability of the component and enhances switching performance.

The IRGP4690D-EPBF adopts Infineon’s Direct Copper Bonding (DCB) technology and is offered in the standard TO-252-3 package. The package is well suited to dissipate considerable power and enable over temperature protection and reliable operation. The TO-252-3 package is an optimal package for optimised thermals for power semiconductors with its threepin setup.

In conclusion, the IRGP4690D-EPBF Single IGBT device is an efficient, reliable and powerful solution for applications requiring high current switching. With the optimal package design and the highest rated current available in the market, IRGP4690 saves energy while allowing significant design simplification.The combination of Field-Stop Technology and Direct Copper Bonding obtains maximum safe operating area (SOA) while providing increased power density.