IRGPH50F Allicdata Electronics
Allicdata Part #:

IRGPH50F-ND

Manufacturer Part#:

IRGPH50F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT FAST 1200V 45A TO-247AC
More Detail: IGBT 1200V 45A 200W Through Hole TO-247AC
DataSheet: IRGPH50F datasheetIRGPH50F Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 45A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
Power - Max: 200W
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRGPH50F is a high-speed, high-current IGBT module manufactured to handle peak currents and wide operating temperatures between 25°C and 150°C. It has a low internal resistance which makes it suitable for switching a variety of loads, including motors, lights, and internal degradation problems. It is also very efficient in dissipating heat.

The IRGPH50F IGBT module is a high-efficiency transistor that uses a novel IGBT structure. This structure uses a combination of an insulated gate and bipolar junction transistors to achieve a fast switching speed and efficient operation. The device is built using high-quality materials and components, making it one of the highest performing IGBT modules on the market.

This IGBT module has many applications where current switching needs to be done quickly and with the utmost efficiency. It is commonly used in motor control systems as it is much more efficient than other switching technologies, especially for high-power loads. It is also often used to control lights and appliances, as it can provide efficient control over current for long periods of time. Additionally, it is also used in medical equipment and in industries where high-power and fast switching is required.

The working principle of the IRGPH50F IGBT module is based on the concept of the insulated gate bipolar transistor (IGBT). This device uses a combination of an insulated gate and a bipolar junction transistor (BJT) to create a higher efficiency junction. The insulated gate allows current to flow through the device while the bipolar junction transistor acts as a switch. The device will be switched on when the gate voltage is higher than the emitter voltage and when the current traveling through the device is below the latch threshold current.

The IRGPH50F IGBT module works by the resistance in the collector of the device being reduced when the gate voltage is increased. This creates an increased current flow from the collector to the emitter of the device. The current flow can then be carefully controlled by accurately controlling the gate voltage. As the resistance is reduced by the gate voltage, the current flowing through the device increases. The output of the device can be regulated by adjusting the gate voltage, allowing for efficient and fast switching.

The efficient current control of the IRGPH50F IGBT module makes it ideal for high-power applications such as motor control, light control, and appliance control. Its small size and low power consumption make it a perfect choice for many applications and makes it ideal for use in medical equipment and other industries where power efficiency is necessary. Furthermore, the device’s low internal resistance helps it to dissipate heat and increase efficiency of operation.

The specific data is subject to PDF, and the above content is for reference

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