| Allicdata Part #: | IRGP4066-EPBF-ND |
| Manufacturer Part#: |
IRGP4066-EPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 600V 140A 454W TO247AD |
| More Detail: | IGBT Trench 600V 140A 454W Through Hole TO-247AD |
| DataSheet: | IRGP4066-EPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Switching Energy: | 2.47mJ (on), 2.16mJ (off) |
| Supplier Device Package: | TO-247AD |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Test Condition: | 400V, 75A, 10 Ohm, 15V |
| Td (on/off) @ 25°C: | 50ns/200ns |
| Gate Charge: | 150nC |
| Input Type: | Standard |
| Series: | -- |
| Power - Max: | 454W |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 75A |
| Current - Collector Pulsed (Icm): | 225A |
| Current - Collector (Ic) (Max): | 140A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | Trench |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRGP4066-EPBF is a single IGBT chip manufactured by International Rectifier, a well-known manufacturer of power semiconductor products. This device is a "High Voltage, High Performance Insulated Gate Bipolar Transistor" (IGBT), and is suitable for use in a variety of power switching applications. It is commonly used in applications where higher current or voltage ratings are needed than what conventional MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) can provide.
The IRGP4066-EPBF is designed for use as a power switching device in high-power applications such as motor drive control and switching converters for power supplies and motor drive systems. It has a wide range of application fields such as invertors, motor drives, power conditioning, UPS systems, tools, medical devices, consumer electronics, telecom systems, and industrial power systems.
The IRGP4066-EPBF is an extrinsic type IGBT device that works on the principle of applying a positive Gate-collector voltage to turn on the device. This classification means that the Gate of the IGBT is connected to an external control circuit and the Gate voltage is used to control the switching of the IGBT. It has a built-in positive temperature coefficient that helps to limit the on-state current, and two PNPN diodes and two fast freewheeling diodes are integrated into the chip to provide protection against short-circuit and surge current.
The IRGP4066-EPBF has several features that make it an ideal choice for high power application switches. It can operate at a collector current of up to 40A and a collector-emitter voltage of up to 600V. It also has a fast switching time of 25ns, and low switching losses of 1.0mJ at turn-on and 0.5mJ at turn-off. It also features low gate drive requirements of less than 1.5A and undervoltage lockout for small drive circuits.
The IRGP4066-EPBF is designed with a range of safety mechanisms to protect against short-circuiting. It is also designed with over-temperature and over-current protection, as well as a built-in gate voltage clamp. This, coupled with its fast switching speeds, makes it a great choice for power switching applications that require switching between high power and low power sources.
Overall, the IRGP4066-EPBF is an ideal choice for a wide range of application fields and power switching requirements. It has a wide range of applications such as motor drives, power switching, switching converters, and UPS systems. It also has fast switching speeds, built-in safety features, and low gate drive requirements. Therefore, it is suitable for use in high-power application switching.
The specific data is subject to PDF, and the above content is for reference
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IRGP4066-EPBF Datasheet/PDF