IRGP4263D1-EPBF Allicdata Electronics
Allicdata Part #:

IRGP4263D1-EPBF-ND

Manufacturer Part#:

IRGP4263D1-EPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V TO247 COPAK
More Detail: IGBT 650V 90A 325W Through Hole TO-247
DataSheet: IRGP4263D1-EPBF datasheetIRGP4263D1-EPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 170ns
Test Condition: 400V, 48A, 10 Ohm, 15V
Td (on/off) @ 25°C: 70ns/140ns
Gate Charge: 145nC
Input Type: Standard
Series: --
Power - Max: 325W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Current - Collector Pulsed (Icm): 192A
Current - Collector (Ic) (Max): 90A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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The IRGP4263D1-EPBF is an IGBT of the single type, which is suited for a wide range of applications due to its wide operating temperature range and low on-state voltage drop characteristics. This type of IGBT is generally used in induction motor drives, UPS systems, welding and audio applications, as well as industrial and domestic lighting applications.

An IGBT is a type of transistor which combines the benefits of both bipolar and MOSFET transistors. It is capable of both bidirectional switching and current conduction in the same way as a MOSFET, but it also has a faster turn-on time and higher input impedance like bipolar transistors. The IRGP4263D1-EPBF is a single device with a single collector and a single emitter which allows for both conducting and switching as well as PWM control.

The working principle of the IRGP4263D1-EPBF is that the internal circuitry of the device uses the IGBT to shape the current flow to a desirable shape. By controlling the magnitude of voltage applied to the gate of the IGBT, the flow of current through the device can be regulated, allowing the device to work as a switch, a current-sensing device, or even a regulator.

The device’s on-state voltage drop characteristics are quite low, which increases power efficiency and enhances the life of the device. This also allows a smaller voltage to be used to switch the IGBT, resulting in less losses from heat and current flow.

The device is also capable of switching at high frequencies, which gives it an advantage over other types of transistors. This is because the IGBT has the ability to reach high switching frequencies faster than other transistors, which can be used for higher switching speeds and power amplification.

The IRGP4263D1-EPBF is a great choice for a wide range of applications, and its high switching frequency, low on-state voltage drops, and wide operating temperature range make it an ideal choice for applications such as UPS systems, induction motor drives, and audio applications. The device is also a good fit for industrial and domestic lighting applications, due to its low loss characteristics.

The specific data is subject to PDF, and the above content is for reference

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