Allicdata Part #: | IRGPC30FD2-ND |
Manufacturer Part#: |
IRGPC30FD2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT W/DIODE 600V 31A TO-247AC |
More Detail: | IGBT 600V 31A 100W Through Hole TO-247AC |
DataSheet: | IRGPC30FD2 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 31A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 17A |
Power - Max: | 100W |
Input Type: | Standard |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
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IRGPC30FD2 belongs to the family of Single IGBTs, also known as Insulated-Gate Bipolar Transistors. Compared to regular transistors, IGBTs are able to handle higher voltages and draw larger currents, making them well-suited in power control applications. IRGPC30FD2 is specifically designed to manage up to 1200-1300V working voltages and between 30 to 33A of current, making it popular in applications ranging from renewable energy converters, inverters and Industrial Motor Drives.
IGBTs are three-terminal devices that combine the properties of both a MOSFET and a BJT. Its working principle relies on the various conduction states of the device — Active, Cut-off, and Saturation — which is achieved by controlling the gate voltage. As the considerable current is related to the gate-emitter voltage, the resistance in the collector circuit must be much higher than the resistance in the gate-emitter circuit.
In Active state, neither the collector nor the emitter junctions are conducting, meaning that the gate registers at a standard 5V in order for the junctions to pass current. The cutoff state activates when the gate voltage drops under 0.8V; this is when the IGBT does not pass current anymore. Lastly, as the current flowing through the collecting junction has been increased to a large enough degree; the collector and emitter junctions will be conducting, which when occurs the IGBT is said to be in saturation.
The IRGPC30FD2 offers wide range of advantages over that of other competitors and IGBTs. It is a high-power device, offering outstanding performance with minimum compromise. This product is usually used in applications that need reduced EMI generation and switching loss. The graph shows the characteristic curves of the IRGPC30FD2 when it is applied as a high-Energy-power device.
As can seen from the graph, the IRGPC30FD2 offers much better performance when compared to other IGBTs. The IGBT has reduced switching losses which leads to less power dissipation and much higher efficiency. The additional features such as fast switching and improved surge capability further add to the advantage. The design of the IGBT also helps to keep it safe from other components such as reverse recovery current, temperature rise and so on, which can injure the sensitive IGBT components.
In stated applications, the IRGPC30FD2 is perfectly suited for low frequency operation due to its high current and voltage ratings as well as its fairly low gate threshold voltage. The switching feature of the IGBT helps in rejecting noise and reduces losses due to discharging capacitances. Furthermore, the reduction of body diode voltage drop helps in increasing efficiency and reducing turn-on losses.
In conclusion, the IRGPC30FD2 is one of the most advanced IGBTs on the market and ideal for power control application. The device offers excellent performance, low switching lapses, higher efficiency and surge capability, along with improved safety which protects it from damages caused by massive current or even temperature. The device suits applications and converters requiring low switching frequencies and is commonly used in renewable energy converters, inverters and industrial motor drives.
The specific data is subject to PDF, and the above content is for reference
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