IRGP35B60PD-EP Allicdata Electronics
Allicdata Part #:

IRGP35B60PD-EP-ND

Manufacturer Part#:

IRGP35B60PD-EP

Price: $ 2.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 60A 308W TO247AD
More Detail: IGBT NPT 600V 60A 308W Through Hole TO-247AD
DataSheet: IRGP35B60PD-EP datasheetIRGP35B60PD-EP Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
4000 +: $ 2.12271
Stock 1000Can Ship Immediately
$ 2.34
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Last Time Buy
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
Power - Max: 308W
Switching Energy: 220µJ (on), 215µJ (off)
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: 26ns/110ns
Test Condition: 390V, 22A, 3.3 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Description

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The IRGP35B60PD-EP is a single IGBT transistor device which is used in many different applications. This article will discuss the applications and working principles of this device.

The IRGP35B60PD-EP is a 650V high current, fast switching, and low-loss IGBT transistor device. This device is typically used in motor control, UPS, and power supply applications. The IRGP35B60PD-EP has an average gate threshold voltage of 3.3V, a typical collector saturation voltage of 2V (@ 10A) and a typical collector-emitter saturation voltage (VCE (sat)) of 1.7V (@ 10A). Additionally, the device has a typical turn-on switching time of 8 ns and a turn-off switching time of 10 ns.

In terms of applications, the IRGP35B60PD-EP is ideal for applications where fast switching, high current, and low losses are required. Examples include DC power supplies, switching power supplies, AC motor drives, UPS, lighting control and many others. In addition to its high current and low-loss features, the device also offers excellent heat radiation characteristics and protects against short circuits.

The IRGP35B60PD-EP is a switching transisitor, meaning that it is composed of both an n-type and a p-type semiconductor material, with an electric gate in between the two. When a positive voltage signal is applied to the gate, the junction between the n-type and p-type material breaks down, allowing current to flow across the gate from one material to the other. This process is called “turn on” of the transistor. In turn off, the reverse happens, with the gate voltage signal dropping to a low voltage, causing the transistor to turn off, and the current flowing across the gate to switched off.

The IRGP35B60PD-EP is designed to handle high currents and fast switching. As such, it has an excellent thermal resistance and gate charge characteristics. This means that the gate charge is low and the voltage drop is minimal, resulting in lower losses and increased efficiency. Additionally, the device features high surge current capability, enabling it to withstand large inrush currents without damage.

In summary, the IRGP35B60PD-EP is a single IGBT transistor device with 650V high current, fast switching, and low-loss characteristics. It is most commonly used in motor control, UPS, and power supply applications. The device is also suitable for applications where high current and low losses are required, such as DC power supplies, switching power supplies, AC motor drives, UPS and lighting control. This is due to its excellent thermal resistance and gate charge characteristics, allowing for superior power conversion and switching performance.

The specific data is subject to PDF, and the above content is for reference

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