IRGP4066D-EPBF Allicdata Electronics
Allicdata Part #:

IRGP4066D-EPBF-ND

Manufacturer Part#:

IRGP4066D-EPBF

Price: $ 7.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 140A 454W TO247AD
More Detail: IGBT Trench 600V 140A 454W Through Hole TO-247AD
DataSheet: IRGP4066D-EPBF datasheetIRGP4066D-EPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 7.38360
10 +: $ 7.16209
100 +: $ 7.01442
1000 +: $ 6.86675
10000 +: $ 6.64524
Stock 1000Can Ship Immediately
$ 7.38
Specifications
Power - Max: 454W
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 155ns
Test Condition: 400V, 75A, 10 Ohm, 15V
Td (on/off) @ 25°C: 50ns/200ns
Gate Charge: 150nC
Input Type: Standard
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Current - Collector Pulsed (Icm): 225A
Current - Collector (Ic) (Max): 140A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Transistors - IGBTs - Single

The IRGP4066D-EPBF is a type of Insulated Gate Bipolar Transistor (IGBT) designed for use in power management applications that require efficient, high speed switching. The device combines the best features of both a bipolar junction transistor (BJT) and a field-effect transistor (FET) by providing an insulated gate to control the bipolar transistor action. It has a fast switching speed and low conduction losses due to its high current capabilities. This makes the IRGP4066D-EPBF ideal for applications that require accurate control of power, such as motor control, AC-DC and DC-DC converters, and lighting control.

The IRGP4066D-EPBF is a vertical planar IGBT with a floating drain structure with a collector-emitter voltage of 600V and a continuous collector current rating of 40A. The device is available in a package with a drain and source terminals, a gate terminal and a base terminal for control. When the base is forward biased, current flows through the collector, through the gate-emitter junction, and then through the source, allowing for current to flow from the source to drain or vice versa. When the gate is reverse biased, current does not flow as the junction is not conducting.

The IRGP4066D-EPBF has a wide range of applications due to its versatile IGBT design and high power capabilities. It can be used in applications such as motor control, AC-DC and DC-DC converters, lighting control, and power management systems. It is also used in power switching applications such as synchronous rectification, soft start circuits, and pulse width modulation. Furthermore, its low conduction losses and fast switching speed make it ideal for high frequency applications, such as switch-mode power supplies and motor drives. Additionally, the IRGP4066D-EPBF can be used in automotive applications such as temperature monitoring, fuel injection control, engine ignition control, and airbag systems. Due to its rugged design, the device can handle large amounts of heat which is necessary in applications such as these.

The IRGP4066D-EPBF is an advanced device that enables efficient, high speed switching and can handle large amounts of power. Its combination of a BJT and FET structures provide precise control over power making it suitable for a wide range of power management applications. Furthermore, its rugged design makes it suitable for use in automotive applications, such as temperature monitoring, fuel injection control, engine ignition control, and airbag systems. The fast switching speed and low conduction losses make it ideal for use in high-frequency applications, such as switch-mode power supplies and motor drives.

The specific data is subject to PDF, and the above content is for reference

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