IRGP30B120KD-EP Allicdata Electronics
Allicdata Part #:

IRGP30B120KD-EP-ND

Manufacturer Part#:

IRGP30B120KD-EP

Price: $ 6.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 60A 300W TO247AD
More Detail: IGBT NPT 1200V 60A 300W Through Hole TO-247AD
DataSheet: IRGP30B120KD-EP datasheetIRGP30B120KD-EP Datasheet/PDF
Quantity: 2216
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 6.42600
10 +: $ 6.23322
100 +: $ 6.10470
1000 +: $ 5.97618
10000 +: $ 5.78340
Stock 2216Can Ship Immediately
$ 6.43
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
Power - Max: 300W
Switching Energy: 1.07mJ (on), 1.49mJ (off)
Input Type: Standard
Gate Charge: 169nC
Td (on/off) @ 25°C: --
Test Condition: 600V, 25A, 5 Ohm, 15V
Reverse Recovery Time (trr): 300ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Description

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IRGP30B120KD-EP is a type of IGBT (insulated gate bipolar transistor) in the single category. It is made from high quality silicon and features excellent temperature and electrical properties. It has low operating voltage and low switching losses which make it ideal for applications requiring fast turn-on times. The IRGP30B120KD-EP IGBT offers an efficient, reliable and cost effective solution for power electronic design applications.

IGBTs are three-terminal switching devices consisting of two semiconductor layers. They combine the high-current capabilities of a traditional power MOSFET with the low operating voltage of a small signal transistor. This combination allows IGBTs to switch relatively high power levels with high efficiency. They are widely used in a variety of applications such as solar inverter systems, motor control, UPS systems, and power supplies.

The IRGP30B120KD-EP IGBT has a blocking voltage of 1200V and an on-state current of 30A. It is typically used in high power, medium frequency motor control, converter, UPS and renewable energy applications. It offers a high switching speed, high current carrying capacity, low on-state resistance, and fast recovery times. The IGBT is also suitable for light load conditions such as low power, low inverter output or backward commutated applications.

As an insulated gate bipolar transistor, the IRGP30B120KD-EP IGBT works similarly to a power MOSFET. When a gate voltage is applied to the device, a high current flows through it. This high current is then regulated by a control voltage, which is applied to the gate of the device. IGBTs are able to control much higher currents than a power MOSFET and have the added advantage of having low switching losses compared to a conventional MOSFET.

The IRGP30B120KD-EP IGBT is also suitable for automotive applications due to its high tolerance to noise and vibration. Its reverse conductivity allows it to be used in applications requiring a large number of switching operations. It is also capable of high-frequency operation when used with a zero-voltage switching scheme.

The IRGP30B120KD-EP IGBT is highly versatile and can be used in a wide variety of applications. It is an ideal solution for power electronic design applications due to its high efficiency, reliability and cost-effectiveness. It is suitable for high power, medium frequency motor control, converters, UPS, renewable energy applications and can also be used in automotive applications. The IGBT offers high switching speed, high current carrying capacity, low on-state resistance and fast recovery times, making it an excellent choice for a variety of power electronic design applications.

The specific data is subject to PDF, and the above content is for reference

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