IRGP4062D-EPBF Allicdata Electronics
Allicdata Part #:

IRGP4062D-EPBF-ND

Manufacturer Part#:

IRGP4062D-EPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 48A 250W TO247AD
More Detail: IGBT Trench 600V 48A 250W Through Hole TO-247AD
DataSheet: IRGP4062D-EPBF datasheetIRGP4062D-EPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 115µJ (on), 600µJ (off)
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 89ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C: 41ns/104ns
Gate Charge: 75nC
Input Type: Standard
Series: --
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Current - Collector Pulsed (Icm): 72A
Current - Collector (Ic) (Max): 48A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Part Status: Obsolete
Packaging: Tube 
Description

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The IRGP4062D-EPBF is a transistor technology component manufactured by International Rectifier. The component is part of a family of transistors known as insulated-gate bipolar transistors (IGBTs). The component is also part of a family of single IGBTs and is a key component used in many applications, including power converters, robotic systems, and frequencies transmission.

The component offers significant advantages over traditional power components since it has a wide voltage range and maximum efficiency. Additionally, the component operates in complete isolation and provides zero overlap switching. This lowers the cost associated with power dissipation and minimizes the amount of energy lost during the switching process. This makes the component ideal for applications that require high power output, low power consumption, and high efficiency.

The component is constructed from silicon and has a breakdown voltage of 600V. This allows it to handle even the most demanding of applications and it can be used for high-power switching and control. Additionally, the component has a maximum storage temperature of -55° to 150°C. This range allows it to be used in a wide variety of environments.

The component operates using a single, active gate. This allows the component to be operated in applications where the emphasis is on speed, reliability, and accuracy. Additionally, the component can operate in larger environments where multiple components, such as transistors and switching circuits, are involved. The component allows for greater flexibility and scalability than other components.

The component operates on two different voltage levels, either gate or emitter, which are determined by the direction of current flow. The gate voltage is used to control the switch\'s operation and to ensure that it opens or closes quickly and reliably. This provides high power, low power consumption and high accuracy when compared to other components.

The component is manufactured using specialized packaging techniques like eutectic bonding and copper lead frame technology. This ensures that the component is able to withstand harsh environments, is reliable and has a long service life. Additionally, the component is designed to have a very low maximum power loss. This reduces the amount of energy wasted during switching.

The component is used in a variety of applications, from automotive to industrial to medical, where power output and efficiency is the primary concern. It is used in high-speed switching applications, where high accuracy and control are essential, as well as in robotic systems, frequencies transmission, and power converters. The component is also used in printed circuit boards and is used in applications requiring high current capacity, as well as in applications where heat is a concern.

In conclusion, the IRGP4062D-EPBF is a transistor component of International Rectifier\'s family of single IGBTs. It has a breakdown voltage of 600V and a maximum storage temperature of -55° to 150°C. The component operates on two different voltage levels, either gate or emitter, and is used in a variety of applications where power output and efficiency is the primary concern. Its specialized packaging allows for improved reliability and a long service life. Additionally, the component is designed to have a very low maximum power loss, which helps reduce energy wastage during switching.

The specific data is subject to PDF, and the above content is for reference

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