IRGP4066PBF Allicdata Electronics
Allicdata Part #:

IRGP4066PBF-ND

Manufacturer Part#:

IRGP4066PBF

Price: $ 4.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 140A 454W TO247AC
More Detail: IGBT Trench 600V 140A 454W Through Hole TO-247AC
DataSheet: IRGP4066PBF datasheetIRGP4066PBF Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
400 +: $ 3.91119
Stock 1000Can Ship Immediately
$ 4.31
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Last Time Buy
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 454W
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10 Ohm, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Description

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IRGP4066PBF Application Field and Working Principle

Insulated-Gate Bipolar Transistors (IGBTs) are power control devices integrated with both insulated-gate bipolar field-effect transistors (IGFETs) and bipolar junction transistors (BJTs) in a single package. The IRGP4066PBF IGBT is designed to withstand high transient energy while switching fast and occupying the least volume. It is suitable for motor control, UPSs, welders, solar inverters, induction heating, and other applications.

Overview

The IRGP4066PBF IGBT is rated at a nominal current of 66A. The continuous drain current is 40A and the peak repetitive drain current is also 40A. Its voltage rating is 600V, while its typical thermal resistance is 4.2 °C/W. The package used is TO-220FP.

Device Structure

The structure of the IRGP4066PBF IGBT consists of two p-type layers and one n-type layer. The first p-type layer is a drain layer, whilst the second one is a buffer layer. The n-type layer is a gate layer. The buffer layer prevents the possible electric breakdown between the drain and gate layers, and thus provides the device with superb stability.

Features

The IRGP4066PBF IGBT has several characteristics that distinguish it from other IGBTs. Firstly, it features tail-current compensation for reducing turn-off switching losses, allowing for a reduction of the dead time in the circuit. Secondly, it also features softness for reducing the tail current stress. Thirdly, it consists of an improved punch-through structure for increasing the forward blocking capability with less drain-source capacitance. Finally, its integrated diode offers fast and soft reverse recovery.

Working Principle

The IRGP4066PBF IGBT is a power control device that uses electric fields to control activities in the device. It is designed to control the current between the source and the drain. A strong negative voltage applied to the gate can induce a strong electric field, and thus increase the source\'s effective width and conductivity. This allows the current to flow between the source and the drain, and the IGBT works accordingly.

Applications

The IRGP4066PBF IGBT is widely used in different applications. Firstly, it is widely employed in motor control for controlling the speed, Torque, and power of an electric motor. Secondly, it is used in UPSs for variable voltage and variable frequency control of the power conversion. Thirdly, it is employed in welders for controlling and managing the welding arc. Fourthly, it is used in solar inverters for controlling and regulating the power from the solar cells. Finally, it is used in induction heating for controlling the ambient temperature.

The specific data is subject to PDF, and the above content is for reference

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