IRGP4630DPBF

Switching Energy:	95µJ (on), 350µJ (off)
Supplier Device Package:	TO-247AC
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	100ns
Test Condition:	400V, 18A, 22 Ohm, 15V
Td (on/off) @ 25°C:	40ns/105ns
Gate Charge:	35nC
Input Type:	Standard
Series:	--
Power - Max:	206W
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 18A
Current - Collector Pulsed (Icm):	54A
Current - Collector (Ic) (Max):	47A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tube

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The IRGP4630DPBF is a metal-oxide-semiconductor field-effect transistor (MOSFET) from Infineon Technologies. It belongs to the family of insulated-gate bipolar transistors (IGBTs), and it its purpose is to use switching frequencies up to 100 kHz. It is a single device, which means that it is not made up of two or more components.The IRGP4630DPBF is specifically designed for use in applications that require high power and high frequency operation, such as motor control, uninterruptible power supplies, and high-powered switchgear. It is rated at 600V, 7A, and is suitable for use in medium voltage ranges up to 1200V.The IGBT\'s working principle is based on the fact that current flows through an insulated gate, which acts as a tunneling barrier between the source and the drain. This barrier allows current to flow when the voltage applied to the gate is greater than the threshold voltage of the device. When voltage is applied to the gate of an IGBT, the electrons in the source and drain regions become trapped in the gate region and the current between them is inhibited.When the voltage applied to the gate of the IRGP4630DPBF is greater than the threshold voltage of the device, electrons are attracted to the gate region, allowing current to flow between the source and the drain. This current is called the “on” current, and is proportional to the magnitude of the gate voltage. When the gate voltage is reduced, the electrons are forced away from the gate and the current flow is inhibited. This current is called the “off” current, and is proportional to the magnitude of the threshold voltage of the device.The IRGP4630DPBF is a robust, reliable, high-power device that offers superior switching performance. It is capable of operating at temperatures up to 150°C, which allows it to be used in a wide range of applications. Its low capacitance and low thermal resistance ensure efficient operation, while its high-speed switching capabilities enable it to perform well at high frequencies. Its compact body, low power losses and superior operating temperature range make it an ideal choice for a variety of power applications. Additionally, its robust package allows it to be used in a broad range of applications without requiring additional cooling or external components.In summary, the IRGP4630DPBF is an integrated metal-oxide-semiconductor field-effect transistor that is specifically designed for use in applications that require high power and high-frequency operation. Its working principle is based on the phenomenon of current flow through an insulated gate, and it is capable of operating at temperatures up to 150°C. Its low capacitance and low thermal resistance make it a reliable, efficient, and robust device, while its high-speed switching capabilities enable it to perform well at high frequencies. Its robust package, combined with its low power losses and wide operating temperature range, make it an ideal choice for a variety of power applications.

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