IRGP4640-EPBF Allicdata Electronics
Allicdata Part #:

IRGP4640-EPBF-ND

Manufacturer Part#:

IRGP4640-EPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 65A 250W TO247AD
More Detail: IGBT 600V 65A 250W Through Hole TO-247AD
DataSheet: IRGP4640-EPBF datasheetIRGP4640-EPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 100µJ (on), 600µJ (off)
Base Part Number: IRGP4640
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 400V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C: 40ns/105ns
Gate Charge: 75nC
Input Type: Standard
Series: --
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Current - Collector Pulsed (Icm): 72A
Current - Collector (Ic) (Max): 65A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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The IRGP4640-EPBF IGBT is a high voltage and high-performance N-channel transistor from the IGBT Single series. It is a ModGen3 chip that offers a variety of capabilities, such as improved switching frequencies, enhanced avalanche immunity, and improved switching waveforms. The IRGP4640-EPBF has been designed to provide efficient and cost-effective switching of loads in flexible AC and DC applications.

The IRGP4640-EPBF is designed with a Flexible Gate Drive Voltage, which enables it to be modified so as to fit a wide range of applications. The fully integrated gate drive system eliminates the need for additional circuitry, thus reducing space and cost. The system is then powered by a 5V logic supply and is capable of driving currents ranging from 0.6A rms up to 10A rms. The gate-to-emitter and gate-to-source capacitance values are typically low, resulting in a very high transconductance rate.

The IRGP4640-EPBF has a maximum drain-source voltage of up to 600V and a maximum collector-emitter voltage of 600V, with a peak gate emitter capacitance of up to 50nF. It also features an incremental SOA power rating of 35 Amps under IGBT conduction. This allows to use the IRGP4640-EPBF in a variety of industrial, automotive and consumer electronics applications.

In terms of its operating principle, the IRGP4640-EPBF IGBT consists of four layers of P-N-P-N semiconductors separated by a thin layer of insulating material. When the gate voltage is applied to the device, the electrons are attracted to the N-type side of the IGBT, thus forming a conducting channel between the N-type electrodes. The conducting channel then allows current to flow from the drain (collector) to the source (emitter). This process changes the voltage and current on the gate of the IGBT, thus making it switch.

The IRGP4640-EPBF IGBT is perfect for applications requiring higher voltage, higher power and high operating frequencies, such as motor control, solar inverters, drives, power supplies, UPS systems, welding and lighting. Thanks to its better performance and less switching losses, the IGBT can also be used in industrial processes, such as brushless dc motor control and controlling variable speed drives.

The IRGP4640-EPBF IGBT is the perfect choice for applications requiring higher voltage, higher power and higher operating frequency. The device is relatively easy to design with and provides improved switching performance and low switching losses. This makes the device ideally suited for a variety of AC or DC switching applications in industrial, automotive or consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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