IRGP4640DPBF Allicdata Electronics
Allicdata Part #:

IRGP4640DPBF-ND

Manufacturer Part#:

IRGP4640DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 65A 250W TO247AD
More Detail: IGBT 600V 65A 250W Through Hole TO-247AD
DataSheet: IRGP4640DPBF datasheetIRGP4640DPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 115µJ (on), 600µJ (off)
Base Part Number: IRGP4640
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 89ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C: 41ns/104ns
Gate Charge: 75nC
Input Type: Standard
Series: --
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Current - Collector Pulsed (Icm): 72A
Current - Collector (Ic) (Max): 65A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IRGP4640DPBF is a highly robust IGBT transistor device providing high power levels and breakdown voltage ratings. This device is ideal for AC and DC motor control applications, and is capable of withstanding high junction temperatures and high surge currents from inductive loads. It is also well suited for welding, lighting and audio applications.

IRGP4640DPBF belongs to the Single IGBTs category. Single IGBTs are normally junction-isolated transistors commonly used in applications that require high power. Single IGBTs are capable of carrying relatively high voltages and currents while providing fast switching times and high frequency performance.

The IRGP4640DPBF has a die size of 33mm2 and a low profile package body. It is isolated from the substrate by a deep trench. This device is packaged in a D-Pak D2PAK case, which is a high temperature, UL recognition, and die-attach package used for power applications. The copper clip enables better thermal dissipation and a reliable electrical connection.

The IRGP4640DPBF has a maximum collector current rating of 46A and a breakdown voltage of 600V. It also has a continuous current rating of 17A and a rMS current rating of 35A. These ratings make it suitable for applications where high currents are necessary and the operation of the device requires high temperatures. The transistor also has a flat base curve, which allows for linear performance over temperature, which is also helpful in controlling current.

The working principle of the IRGP4640DPBF is based on the use of its four N-type and four P-type silicon layers. The N-type layers act as the collector of the device and the P-type layers act as the emitter. When a voltage is applied to the gate of the device, a controlled current flows from the collector to the emitter. This current is amplified by the device and can be used to control a load.

In terms of applications, the IRGP4640DPBF is commonly used in AC and DC motor control, welding, lighting, and audio applications. The low profile package and flat base curve of the device make it suitable for applications that require a high level of control such as in the control of AC motors and audio applications. The transistor can also be used in induction heating applications and applications that require fast switching.

In conclusion, the IRGP4640DPBF is an ideal choice for applications requiring high power levels, high breakdown voltage ratings, and continuous current ratings. The package design paired with its four N-type and four P-type silicon layers makes it a reliable device for use in AC and DC motor control, welding, lighting, and audio applications. The device is also capable of withstanding high junction temperatures and high surge currents from inductive loads.

The specific data is subject to PDF, and the above content is for reference

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