IRGP4690DPBF

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IGBTs (Insulated Gate Bipolar Transistors) provide efficient means to switch electrical power. Higher efficiency and improved switching performance are essential to many next-generation devices requiring such high power and speed. The IRGP4690DPBF is an insulated gate bipolar transistor from International Rectifier (IR) that sets an industry standard for many applications.

IRGP4690DPBF is a single IGBT with a wide safe operating area (SOA) that extends up to 4 A/650 V in a D2PAK surface mount device. It features low switching losses and a soft fast-recovery anti-parallel diode. These features make the IRGP4690DPBF suitable for various applications, from home appliances and lighting fixtures, to to medical equipment and televisions.

The IRGP4690DPBF enables end-product designers to benefit from its improved high-power efficiency and higher switching performance. It has a direct current (DC) collector current rating of 4 A and collector-emitter voltage of 650 V. Its fast switching speed reduces switching losses, which decreases heat generation and thus enhances the reliability of the devices in which it is used. This is especially helpful in applications in which the device must operate reliably in high-temperature environments.

The IRGP4690DPBF can be used in a variety of different applications. It can be used in electric motor controllers, AC adapters, server and telecom power supplies, medical power supplies, driver stages, choppers and voltage regulators. It can also be used as a power switch in industrial inverters and converters, as well as for inverters for solar energy systems.

The IRGP4690DPBF is designed to operate in medium- and high-power applications. It can switch current in both directions and can be used to control large amounts of current in a cost-effective manner. In addition, it features a soft switching function which decreases switching losses and improves switching speed.

IRGP4690DPBF\'s working principle is based on its construction. It is composed of two transistors separated by an insulating layer. When the current is passed through the IGBT, the gate is driven positive and the two transistors turn on. This causes a current to flow through the IGBT. The collector-emitter voltage determines how much current is allowed to flow through the device. The amount of current that is permitted to flow through the device is controlled by the gate-emitter voltage.

IRGP4690DPBF\'s main feature is that it is capable of switching large currents quickly. Its low switching losses also make it one of the most reliable IGBTs available. This makes it suitable for many applications, from electric motors and lighting fixtures, to medical equipment and televisions.

The IRGP4690DPBF is a highly reliable and efficient transistor that is widely used in industrial and commercial applications. It offers a wide safe operating area, low switching losses, and a soft fast-recovery anti-parallel diode. It is easy to use and is suitable for a variety of different applications. This makes it an excellent choice for many applications requiring high-power and efficient switching.

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