IRGP6690D-EPBF Allicdata Electronics
Allicdata Part #:

IRGP6690D-EPBF-ND

Manufacturer Part#:

IRGP6690D-EPBF

Price: $ 4.94
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 90A TO247AD
More Detail: IGBT 600V 140A 483W Through Hole TO-247AD
DataSheet: IRGP6690D-EPBF datasheetIRGP6690D-EPBF Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
400 +: $ 4.49032
Stock 1000Can Ship Immediately
$ 4.94
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Last Time Buy
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Power - Max: 483W
Switching Energy: 2.4mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 140nC
Td (on/off) @ 25°C: 85ns/222ns
Test Condition: 400V, 75A, 10 Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Description

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IGBT is short for insulated gate bipolar transistors. It has many advantages over traditional bipolar transistors, such as low on-state resistance, low switching losses and easy to control. IRGP6690D-EPBF is a single IGBT designed to meet the needs of motor control and power conversion applications. This article will discuss the application field and working principle of the IRGP6690D-EPBF.

Application Field

The IRGP6690D-EPBF is designed to meet the needs of motor control and power conversion applications. It features a wide bandgap semiconductor material with low on-state voltage drop, high voltage ruggedness and high efficiency. The IGBT has a low operating temperature range and high immunity from noise. This makes it suitable for use in applications such as motor drive, UPS, inverters, solar encoders, ac-dc converters and power factor correction. In addition, it is also suitable for applications that require high speed switching and accurate control.

Working Principle

The IRGP6690D-EPBF is a single IGBT consisting of two internal MOSFETs. The main MOSFET acts as a switch and the auxiliary MOSFET provides gate drive control. When a voltage is applied to the gate, the internal MOSFETs create an electric field, which turns on the IGBT. As a result, a current can flow through the device. In the off state, the MOSFETs are open and the current flow is blocked. The IGBT can also be switched off by applying a voltage in the opposite direction. This allows for accurate control of the current and provides fast switching, which is important for motor control and power conversion applications.

The IRGP6690D-EPBF is a reliable and efficient IGBT for use in a wide range of applications. It features a wide bandgap semiconductor material with low on-state voltage drop, high voltage ruggedness and high efficiency. The device is suitable for use in motor drive, UPS, inverters, solar encoders, ac-dc converters and power factor correction applications. The IGBT provides accurate control and fast switching, making it an ideal choice for power conversion and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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