IS41LV16100B-50TL-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	DRAM - EDO
Memory Size:	16Mb (1M x 16)
Write Cycle Time - Word, Page:	--
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II

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<strong>Introduction</strong></br>IS41LV16100B-50TL-TR is a 1Mb sync-SRAM device from ISSI. It is based on static random access memory (SRAM) technology and provides a high data throughput, making it ideal for various applications. The device is ideal for use in applications requiring the transfer, distribution, and storage of large amounts of data and applications where flexibility and low power consumption are essential. </br></br><strong>Memory Applications and Working Principle</strong></br>IS41LV16100B-50TL-TR has been widely used in various memory-based applications. It provides fast data read and write operations and is suitable for applications requiring low power consumption and flexible operation. This device includes standard access and toggle access modes. Standard access mode is used for normal operation and is characterized by a read cycle time of 70ns and a write cycle time of 70ns for various memory requirements. The toggle access mode increases the read speed to include a burst transmission of up to 200 MB/s.In addition, the device also contains an array of SRAM cells, which are the basic memory cells. In SRAM cells, the data is stored using a pair of cross-coupled inverters. The presence of a logic one is stored in one inverter while a logic zero is stored in the other. At any given time, the values in the cell remain stable and no power is required to retain the data. The data is written to the cell by supplying logic one or logic zero to one of the inverters while the other one is held in the opposite state of that being written. This ensures that the input is passed to the output without losing any data in the transition.The IS41LV16100B-50TL-TR device also includes several other features such as error correction code (ECC) and power down mode. ECC is used to detect and correct single-bit errors in the data stored in the device. It uses a Hamming approach and contains an 8-bit parity code in each memory cell. The power-down mode is used to reduce the operating power consumption and allows the device to enter a low power state when not in use.</br></br><strong>Conclusion</strong></br>IS41LV16100B-50TL-TR is a 1Mb sync-SRAM device from ISSI that has been widely used in various memory-based applications. This device provides high data throughput and allows for low power consumption while still meeting various memory requirements. It supports standard access and toggle access modes, and also mcludes an array of SRAM cells and error correction code (ECC). Lastly, the device also features power down mode, making it ideal for applications where flexibility and low power consumption are essential.

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