IS41LV16105B-60KL-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	DRAM - FP
Memory Size:	16Mb (1M x 16)
Write Cycle Time - Word, Page:	--
Access Time:	30ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	42-BSOJ (0.400", 10.16mm Width)
Supplier Device Package:	42-SOJ

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Introduction

IS41LV16105B-60KL-TR is a 512K x 16 bit CMOS low power pseudo-SRAM, designed to replace traditional memory products. Its single Vcc power supply and low voltage operation make it an excellent choice for a wide range of applications. The device features low power consumption, fast access time, and fast write time operations. The IS41LV16105B-60KL-TR is suitable for embedded applications such as cellular phones, PDAs, and other portable electronic products where low power, reduced area, and high performance are required.

Applications

IS41LV16105B-60KL-TR is ideal for embedded applications where a low power, small area, high performance, SRAM device is needed. It is extensively used in the automotive, medical, industrial, communications, and consumer electronics markets. Common applications include microprocessor caches, programmable logic controllers, embedded controllers, audio visual displays, portable medical systems, remote control systems, smart phones and other portable devices.

Features

Amongst its many features, the IS41LV16105B-60KL-TR includes :

• Low power consumption in active and standby modes
• Operational voltage range from 2V to 3.6V
• – Fast access time of 10ns maximum with write time of 10ns maximum
• High speed burst operation
• Multiple I/O bus widths supported (x8 and x16)
• Operates at a frequency of 1.2V to 3.6V
• Bus hold data flag
• Address register auto-precharge
• Cache tag compatibility with industry standard devices
• Page mode operation
• Single power supply operation
• Low power consumption with 3.3V I/O
• Available in TSOP and 24-pin DIP packages

Working Principle

The IS41LV16105B-60KL-TR employs a pseudo-static RAM technology that allows the chip to maintain a continuous address and data stream. The device features a serial burst configuration with two or less wait states when executing a read or write operation. During normal operation, the chip continuously reads or writes from its memory as a burst of 16-bits of data. This technique eliminates the extra cycles required in conventional SRAMs to transfer a single 16-bit word. The device operates at a fast access time of 10ns with a write time of 10ns. The device is organized as 512K x 16 bits and has the ability to configure the chip for x8 or x16 buses. This allows the user to select a physical chip size to suit the application. The device also includes auto-precharge and page mode features. This allows the user to utilize the device with low pin count microprocessors and further reduce the device power consumption. In addition, the device has a bus hold data (Coulombic) flag that prevents data bus contention when the device is placed in a multiple bus system.

Conclusion

The IS41LV16105B-60KL-TR is an excellent low-power and high-performance memory solution for a variety of embedded applications. It features low power consumption, fast access time, and burst operations. It is an optimal choice for automotive, medical, industrial, communications and consumer electronics markets. Additionally, the device supports multiplebus widths (x8 and x16) and supports page mode operations which further enhance the device performance.

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