IS41LV16100D-50TLI-TR Allicdata Electronics
Allicdata Part #:

IS41LV16100D-50TLI-TR-ND

Manufacturer Part#:

IS41LV16100D-50TLI-TR

Price: $ 4.25
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL
More Detail: DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns
DataSheet: IS41LV16100D-50TLI-TR datasheetIS41LV16100D-50TLI-TR Datasheet/PDF
Quantity: 1000
1 +: $ 4.25000
10 +: $ 4.12250
100 +: $ 4.03750
1000 +: $ 3.95250
10000 +: $ 3.82500
Stock 1000Can Ship Immediately
$ 4.25
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: --
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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IS41LV16100D-50TLI-TR is a type of synchronous static random access memory (SRAM) which is widely used in digital signal processing, high-speed devices, image processing as well as other applications that require large bandwidths and high-speed circuit operation. This particular model is manufactured by ISSI, an American company which specializes in semiconductor memory solutions.

SRAM is a type of volatile random access memory (RAM) that stores data on a small integrated circuit. It does not rely on the periodic refreshing of the memory, unlike other RAM types. SRAM is much faster than standard dynamic RAM (DRAM), but also more expensive and consumes more power.

The IS41LV16100D-50TLI-TR is a double data rate (DDR) SRAM device with a 3-wire bus and 12 address pins. The device is composed of 16,384 bits, organized as 2,048 words of 8 bits each. The IS41LV16100D has an access time of 50ns, a clock frequency of 100MHz and a data transfer rate of 200MT/s. It has a static power dissipation of 10mW and a power-down mode that reduces power consumption to 0.1mW. The device also offers an on-chip power-down option which reduces power to a minimum when idle.

The IS41LV16100D-50TLI-TR offers DQS pins for output data strobe (ODS) and differential line strobe (DLS). It also offers an EDQS bus that is used to control data transfers. The device also includes an EDQ pin which enables the transfer of information from one address to another without requiring a read/write cycle. This feature offers greater flexibility when designing systems.

The working principle of the IS41LV16100D-50TLI-TR involves the use of two flip-flops, one is connected to the data bus, while the other is connected to the clock. The SRAM stores the data in two sets of instructions, one set is for writing data and the other is for reading data. When the device receives a write command, it stores the data in the input register and then writes it to the memory device. When the device receives a read command, it reads the data from the memory device and then stores it in an output register. The device then sends the data back to the input register and the process is complete.

The IS41LV16100D-50TLI-TR is an efficient and feature-rich SRAM device, making it an ideal choice for a variety of applications. Not only does it offer higher speed, lower power consumption and greater flexibility, but also provides a reliable and high-performance solution to a range of needs.

The specific data is subject to PDF, and the above content is for reference

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