IS41LV16100B-50KL

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	DRAM - EDO
Memory Size:	16Mb (1M x 16)
Write Cycle Time - Word, Page:	--
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	42-BSOJ (0.400", 10.16mm Width)
Supplier Device Package:	42-SOJ

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IS41LV16100B-50KL application field and working principle:Memory is a device whose primary purpose is to store information. This information can be either static (e.g. program code) or dynamic (e.g. data). Most popular types of memory are RAM (random access memory), ROM (read-only memory) and flash memory. IS41LV16100B-50KL is an IC chip belonging to the family of EEPROMs and is an improved version of the commonly used IS41LV16100 series.The IS41LV16100B-50KL is an industrial-grade, 16Mbit (2M×8) (2-million-bit) non-volatile memory IC. It has a 64-pin DIL package and operates with a supply voltage range of 2.7V to 3.6V. The memory chip also provides a programmable erase capability which is well-suited for use in a variety of application areas. The IS41LV16100B-50KL can be used in applications such as industrial process control systems, automotive applications, telecommunications systems, real-time clock circuits, portable electronic devices, serial data communications, programmable logic controllers, etc. The chip provides a very high endurance capability and is particularly suitable for applications that require frequent programming or erasing of data such as automotive applications and industrial process control systems. The main purpose of the IS41LV16100B-50KL device is to store information in a non-volatile manner, meaning that the memory contents remain after power-down. This is a key advantage of non-volatile memory over volatile memory, such as RAM, which is cleared when power is removed. This makes non-volatile memory ideal for use in applications where data needs to be retained across power cycles.The IS41LV16100B-50KL works by divided the 2Mbits of storage into a set of 4096 pages, each containing 256 bytes. These pages are further divided into 32 byte-sized blocks (8 bits per byte) for programmering. The chip has several power modes which can be used to reduce power consumption, including a stand-by mode which can be activated when the device is not in use. The IS41LV16100B-50KL device has two bus interface ports, the DataBus and the AddressBus, which are used to transfer data between the external world and the on-chip memory array. Data can be written to the memory cells in the writable memory by applying signals to the DataBus and writing specific control signals to the AddressBus. Similarly, data can be read from the memory cells and transferred to the external world by applying signals to the DataBus and writing specific control signals to the AddressBus.The IS41LV16100B-50KL device also provides several modes for erasing the memory content. The device can be programmed to commonly erase specified pages or entire blocks at once. There is also an Erase Suspend mode that allows multiple pages or blocks to be programmed or erased from multiple locations in one step. This mode of operation makes the device highly suitable for applications that require frequent programming or erasing of data such as automotive applications and industrial process control systems. Overall, the IS41LV16100B-50KL device provides a highly reliable and cost-effective memory solution for many different types of applications. The device’s ability to retain data across power cycles makes it ideal for applications where data needs to be retained with minimal power consumption. The device’s programmable erase capability makes it particularly well-suited for applications which require frequent data manipulation. The device\'s robust design ensures that it is reliable and can withstand even the toughest of conditions.

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