IS41LV16100B-60TL

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IS41LV16100B-60TL is a type of Static Random Access Memory (SRAM). It is a low-power, high-capacity SRAM module with a clock frequency of 60MHz and 16M-bit capacity. This module features a six-bit wide data bus, is composed of 512K x 16 bit configuration and has a single 3.3 V power supply.

A unique feature of the IS41LV16100B-60TL module is its low-voltage and low-power characteristics. It only requires 3.3V of operation voltage, which significantly reduces the power consumption of the module. It also requires no battery to sustain its operation.

The IS41LV16100B-60TL is designed for use in applications requiring fast response times, high-performance memory and reliable data storage. It is a preferred choice for embedded systems, data processing, mobile computing, desktop and workstation computing, telecommunications, automotive control systems and more.

The IS41LV16100B-60TL can be used in three modes: read, write and burst read. In read mode, data from the memory is read from the address pins on the memory. This process is repeated until the desired number of data words has been read. In write mode, data is written to the memory starting at the first address pin. The data can be written to an entire byte at once or byte by byte. Finally, in burst read mode, data is read at a higher speed than what is possible in the other modes. This mode is often used when the memory needs to be accessed quickly, such as during video playback.

The IS41LV16100B-60TL features an 8-bit write cycle time (tWR) and 32-bit retrieval time (tRC). The 8-bit write cycle indicates how quickly a single byte can be written to the memory and the 32-bit retrieval indicates how quickly a block of 32-bits can be read from the memory. These two values, along with the module\'s clock frequency and access time, are the main components that determine how quickly the module can be used during operation.

In summary, the IS41LV16100B-60TL is a 16M-bit SRAM memory module designed for very low power consumption, wide dynamic range, and excellent performance for use in applications requiring fast response times and reliable data storage. It features 512K x 16 bit configuration, 3.3V operation voltage, 8-bit write cycle time and 32-bit retrieval time, and is suitable for a wide range of applications.

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