IS41LV16105B-60TL

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The IS41LV16105B-60TL is part of a new family of memory devices that provides a simple, reliable and cost effective storage solution for modern storage applications. The device has a robust architecture, full-feature design and low power consumption, making it ideal for a wide range of applications. The device is available in either single or double power supply configurations and can be programmed at various voltages and timescales to suit the specific needs of the application. In addition, the device offers a range of timing and burst length configurations to ensure a variety of different latency scenarios.

IS41LV16105B-60TL Memory Applications

The IS41LV16105B-60TL offers a range of operating temperature ranges and boasts a high speed operation even when subjected to extreme temperatures. It is suitable for a range of highly demanding applications including medical imaging and video recording, audio and video editing, imaging/data analysis, and mobile computing. With a high speed clock frequency of up to 400MHz, the device provides unmatched performance for storage operations, making it ideal for environments which require high speed reliable simultaneous access to large amounts of data.

In addition to its impressive performance, the device features a built-in Error Correction Code (ECC) engine for powerful error correction and an advanced write protection mechanism to prevent accidental or malicious data modifications. The device also supports hot inserting and hot removal to ensure high availability and security of the data stored in it. This is important for applications such as industrial automation, automotive and instrumentation. The device also supports secure backup and self-test functions to meet the requirements of safety-critical applications.

IS41LV16105B-60TL Memory Working Principle

The IS41LV16105B-60TL features an array architecture based on a 2.5D construction. Its memory core comprises 16Mbit memory arrays stacked together in 3-dimensional structures. Each 2.5D memory array consists of 128Kbit cells arranged in a 35µm × 35µm square matrix which is divided into 16 Minor Sub-arrays. Each Minor Sub-array is further subdivided into 8 Super Sub-arrays, which are further divided into 8 memory cells per Sub-array.

The device employs a single-bit column select technique to address the memory cells. An MSB signal is used to select the memory cell in a column. 8 bit/column selection and 16 bit read/write are also supported. All data is stored in the cells in a static manner which allows the data to be stored permanently in the device until it is actively cleared by the user.

Each 2.5D array comprises one power-supply voltage rail and a ground. It is designed such that any power supply irregularities are not stored long in the device. The device’s power supply is protected against overvoltage and reverse polarity. Each memory cell can store 4 bits of information, which is then transmitted along a single data path. The device is capable of operating at speeds of up to 400MHz.

The device features a self-refresh mode which is enabled when the device is not being accessed during a period of time. This helps to conserve power and maintain data integrity in the device even when it is not in use. The device’s self refresh operation is based on the refresh cycle count and refresh cycle delay, and can be controlled by the user.

Conclusion

The IS41LV16105B-60TL is a highly advanced, reliable, and cost-effective memory device suitable for a wide range of demanding applications. It offers a range of operating temperatures and can operate at speeds of up to 400MHz. It features a built-in ECC engine, as well as an advanced write protection mechanism to prevent accidental or malicious data modification. Its self-refresh mode helps to conserve power and maintain data integrity even when not in use. Its robust architecture and feature set make the IS41LV16105B-60TL the ideal solution for a variety of storage applications.

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