IS41LV16256C-35TLI

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Memory is a key component of any digital system. IS41LV16256C-35TLI is a type of static random access memory (SRAM) specifically designed for high-speed data transfer and all-around reliability. It is used in a variety of applications, including embedded systems, data acquisition, computer systems, and communications. This article provides an overview of the IS41LV16256C-35TLI application field and working principle.

Application Field:

The IS41LV16256C-35TLI is a low-voltage SRAM device ideal for applications requiring fast data transfer and high reliability. This type of device is composed of a 16Mbit memory array, which provides 512Kword or 1Mword of memory. The device has a synchronous interface with a 4-bit multiplexed address and is organized in an 8Kword x 8bit configuration. The IS41LV16256C-35TLI offers a number of advanced features, including write protect, multiple access protection, simultaneous read and write capability, and improved ECC. It is available in several package options, including a TSSOP (Thin Small Outline Package) and a VFBGA (Very Fine Pitch Ball Grid Array), which makes it suitable for smaller form factors. The device operates on a single power supply at 1.8V and features a maximum access time of 30ns. It is also RoHS compliant, making it suitable for use in a wide range of applications.

Working Principle:

The IS41LV16256C-35TLI operates on a single power supply of 1.8V. This device uses a 4-bit multiplexed address bus, with an address of 8bits. The control signals are able to access a 512Kword or 1Mword of memory at speeds up to 30ns. It supports a synchronous interface and provides a multiple access protection with WRITE PRT. This SRAM device supports simultaneous read and write operations with improved ECC. In addition, it also has error flag signals with chip enable and write protect controls for seamless data transfer. Furthermore, the device has a multiple write protection feature that prevents accidental data overwriting.

In summary, the IS41LV16256C-35TLI is a highly reliable, low-voltage SRAM device designed for high-speed data transfer. It is suitable for a variety of embedded systems, data acquisition, computer systems, and communications applications. The device features a synchronous interface, multiple access protection, simultaneous read and write capability, and improved ECC. It also offers a number of advanced features, including write protect and a multiple write protection feature. Furthermore, it is available in several convenient package options and RoHS compliant.

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