IS43TR16128B-125KBL

Memory: IS43TR16128B-125KBL application field and working principle

IS43TR16128B-125KBL is a synchronous dynamic RAM (SDRAM) device, offering high-performance and high-speed operation. It is specifically designed to meet the demanding requirements of modern computer systems, mobile electronic devices, and other digital applications. The device is based on advanced memory cell architecture, which provides a high-speed memory device suitable for a variety of applications. IS43TR16128B-125KBL is also compatible with most popular semiconductor IC processes and can be used in a variety of products.

The IS43TR16128B-125KBL synchronous dynamic RAM device features an industry-standard pin assignment and a 13-bit internal address interface. The device is organized into 8 banks of 16,384dwords each, with an active address line. This efficient pin assignment greatly reduces the overall real estate of the module while still providing an optimal power solution.

Features of IS43TR16128B-125KBL

• Supports up to 2.4 GHz clock frequency
• Wide 4374Mbit/s data rate
• Operates from a single 2.5 V power supply
• Industry-standard pin assignment
• 13-bit internal address interface
• 128Mbit active banks
• Compatible with most popular semiconductor IC processes

Applications of IS43TR16128B-125KBL

IS43TR16128B-125KBL is suitable for a variety of applications including computer systems, mobile electronic devices, and other digital applications. It is capable of providing high-speed operation and is suitable for a variety of applications. These include:

• Computer motherboards
• Digital signal processor-based signal processing systems
• Embedded system applications
• Industrial computer systems and robotic controllers
• Automotive infotainment and telematics systems
• Multimedia products
• Non-PCIe storage devices
• Mobile devices such as tablets, digital cameras, and smart watches

Working Principle of IS43TR16128B-125KBL

IS43TR16128B-125KBL is a synchronous dynamic RAM (SDRAM) device, meaning it converts digital input signals into electrical energy. This energy is then stored in a set of capacitors (cells) which form a discrete dynamic RAM (DRAM) array. The capacitors are then charged and discharged at a rate determined by the external clock signal. This is used to create a pulse train which can be used to read or write data. The high-speed clock provides the data access rate, with a maximum rate of 2.4GHz for IS43TR16128B-125KBL.

IS43TR16128B-125KBL operates on a single 2.5V power supply and is designed with a low-power operating mode which requires fewer power cycles during operations to reduce power consumption. This makes the device ideal for use in battery-powered systems and other power-sensitive applications. The device also features an industry-standard pin assignment, making it suitable for use in a variety of applications.

The IS43TR16128B-125KBL synchronous dynamic RAM device is an ideal choice for memory designs. It provides high-speed performance while consuming low amounts of power. Its industry standard pin assignment makes it suitable for a variety of applications, and its compatibility with most popular semiconductor IC processes ensures easy integration into existing systems.