IS43R16160D-6BL Allicdata Electronics
Allicdata Part #:

706-1204-ND

Manufacturer Part#:

IS43R16160D-6BL

Price: $ 5.26
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 256M PARALLEL 60TFBGA
More Detail: SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 16...
DataSheet: IS43R16160D-6BL datasheetIS43R16160D-6BL Datasheet/PDF
Quantity: 9
1 +: $ 4.77540
Stock 9Can Ship Immediately
$ 5.26
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x13)
Description

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Memory - IS43R16160D-6BL Application Field and Working Principle

The IS43R16160D-6BL (hereafter referred to as the “device" or “IS43R”) is an integrated semiconductor memory pro-duced by International Rectifier. It is a 16-megabit, synchronous, dual-access, random access memory device(SDRAM) that is suitable for a variety of industrial and commercial applications. In this article, we will discussthe application field and working principle of the IS43R16160D-6BL.

Application Field

The IS43R is a single RAM device that is suitable for a variety of applications, ranging from general purposeembedded applications to gaming consoles and high-performance computing systems. It is a low-voltage, low-power-consumption device, making it ideal for portable devices that require long battery life. The IS43R has amaximum operating frequency of 150MHz, a maximum random access time of 15ns, and maximum interfacebandwidth of up to 6.4GB/s. It also features an industry-standard JEDEC-compliant SDRAM low-powerarchitecture, making it suitable for a wide range of applications.

The IS43R is also suitable for high-performance computing applications, such as server and workstationapplications. It has a wide range of high-performance features, including a 4-way interleaved architecturethat enables quick access of data. Additionally, the device offers support for single-cycle burst access at full-rated frequency, hi-speed pipelined operations with no wait states, and an array of error detection andcorrection features. In summary, the IS43R has the necessary features to provide high-performance yet low-power operation in a variety of embedded and computing applications.

Working Principle

The IS43R is a synchronous dynamic RAM device that uses a bank addressing mechanism to provideconcurrent, randomly accessible data access. The device is designed to be interfaced with buses such as theHigh-speed Uncomplicated Odd/Even Byte Connected bus, or HUB-9. The IS43R addresses a single 16-bit word at a time and transfers it to a 16-bit data bus, allowing processor-level concurrent access.

The device is powered by a single 2.5V supply, and the power can be distributed using an internal gatingstructure to minimize active power consumption. The device also features an internal auto-refresh counter,which reduces refresh access overhead as well as refresh period. The device can also be set for burst modeaccess, which allows data to be read or written in a single operation.

The IS43R also features an array of error detection and correction features, such as parity and ECC. Theparity bits serve as a check to detect any data errors, while the ECC ensures the data accuracy. The devicealso supports a range of power-saving modes, including self-refresh and row access strobe (RAS)timeout.

In conclusion, the IS43R16160D-6BL is a 16-megabit, synchronous, dual-access, random access memorydevice (SDRAM) that can be used in a variety of embedded and computing applications. The device has amaximum operating frequency of 150MHz, a maximum random access time of 15ns, and maximum interfacebandwidth of up to 6.4GB/s. The device also has a wide range of power-saving features, making it ideal forportable applications. Furthermore, the device features an array of error detection and correction features,including parity and ECC.

The specific data is subject to PDF, and the above content is for reference

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