IS43TR16128C-15HBLI

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR3
Memory Size:	2Gb (128M x 16)
Clock Frequency:	667MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	1.425 V ~ 1.575 V
Operating Temperature:	-40°C ~ 95°C (TC)
Mounting Type:	Surface Mount
Package / Case:	96-TFBGA
Supplier Device Package:	96-TWBGA (9x13)

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IS43TR16128C-15HBLI Memory

IS43TR16128C-15HBLI is a synchronous dynamic random-access memory (SDRAM) device, manufactured by ISSI. The DRAM device utilizes the 0.15μm process technology, achieving the highest speed performance in the IS43TR16128C SDRAM family.

Application Fields

IS43TR16128C-15HBLI SDRAM is mainly used in communication, customer premises, consumer, industrial, and automotive sectors. This device provides an ideal solution for products with high-end memory demands, such as multi-media computer systems and functionality enhancements. IS43TR16128C-15HBLI SDRAM is suitable for applications such as real-time high-speed computing, data transmission, communications, military systems, and medical equipment. It also supports applications that require larger memory densities, such as digital cameras, camcorders, and portable audio players.

Benefits to Consumers

IS43TR16128C-15HBLI SDRAM offers many advantages for end product customers. It allows for higher data processing speeds, greater memory densities and faster memory accesses from various clock cycles, providing improved performance and reliability. With improved speeds, it also reduces Time-To-Market of products.The device also offers power-saving features with its clock gating, deep power down and ultra-low power standby mode, helping reduce overall system power consumption, minimizing heat generation. This improved power efficiency and Reliability-Enhancing Circuit (REC) technology makes IS43TR16128C-15HBLI a choice for products that require data reliability in extreme and harsh conditions.

Working Principle

IS43TR16128C-15HBLI SDRAM follows the synchronous DRAM (SDRAM) architecture. It consists of an array of DRAM memory cells connected to a row and column address decode, controlling logic, and I/O interface. A row address decoder is used to select the active row and a column address decoder is used to select the column. The device provides address and control input with a single +3.3V power supply and allows for single +2.5V termination and on-die termination. The IS43TR16128C-15HBLI employs an advanced clock gating technique, and supports multiple power-saving features such as deep power down, stand-by and active/inactive modes.The device has a high-speed data transfer rate of 133MHz, allowing for a maximum data throughput of 8GB/s. It also supports a burst length of 4, 8, and 16, up to an 8-word deep burst for high-bandwidth applications. IS43TR16128C-15HBLI is equipped with an error-correcting code (ECC) for improved data integrity.

Conclusion

IS43TR16128C-15HBLI SDRAM is a high performing and reliable synchronous DRAM device, which offers excellent data processing performance and low power consumption, making it an ideal solution for high-end memory requirements. The device features high speed data transfer rates and multiple power-saving features, as well as ECC for data integrity, providing reliability in extreme and harsh conditions.

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