IS43DR16128C-3DBLI Allicdata Electronics
Allicdata Part #:

706-1569-ND

Manufacturer Part#:

IS43DR16128C-3DBLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 2G PARALLEL 84TWBGA
More Detail: SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 33...
DataSheet: IS43DR16128C-3DBLI datasheetIS43DR16128C-3DBLI Datasheet/PDF
Quantity: 34
Stock 34Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)
Description

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IS43DR16128C-3DBLI is a powerful, high-performance and low power DRAM, which can be used to store large amounts of data. It is often used in many memory-dependent applications and has become an important part of the memory industry today. Its nonvolatile feature makes it easier for designers to combine memory expansion and storage together.

The working principle of IS43DR16128C-3DBLI is based on the same operating principle as conventional DRAM. It uses transistors, which are arranged in a grid, to store and access data. Each transistor is combined with a capacitor to form a memory cell, which is then combined with multiple memory cells to form a memory array. When a memory access is sent to a memory cell, the transistor will turn on and the data stored in the capacitor is read out. By programming the data stored in the memory cells, different programs can be run on the device. IS43DR16128C-3DBLI memory arrays are composed of a variety of memory cells and are easily scalable, making them suitable for use in various applications.

IS43DR16128C-3DBLI is a crucial development in the memory field and offers many advantages. It is highly reliable, with a long lifespan and little or no data loss. It is also low power, making it suitable for a range of applications, including portable devices, where saving power is important. Moreover, it has a high efficiency and superior performance. It has a high data rate of 3200 megabits per second (Mbps) and has a fast random access time of 20nS. Furthermore, this device can be used to store and process a large amount of data.

IS43DR16128C-3DBLI is suitable for applications such as embedded systems, automotive systems, consumer electronics, and medical and industrial process control. In embedded systems, it is used to store and access large amounts of data, often in combination with other memory components. In automotive systems, it is used to store both volatile and nonvolatile data. It can also be used to store data for consumer electronics, such as music players, cameras, and portable gaming consoles. Lastly, it can be used in medical and industrial process control for controlling different functions.

IS43DR16128C-3DBLI is a widely used and powerful memory device, and its many advantages make it suitable for a wide range of applications. Its nonvolatile feature makes it ideal for use in embedded systems, automotive systems, consumer electronics, and medical and industrial process control. It is also low power, efficient, high performance, reliable, and long-lasting. As a result, it has become an indispensable part of the memory industry today.

 

The specific data is subject to PDF, and the above content is for reference

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