IS43R86400F-5TLI

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR
Memory Size:	512Mb (64M x 8)
Clock Frequency:	200MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	700ps
Memory Interface:	Parallel
Voltage - Supply:	2.5 V ~ 2.7 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package:	66-TSOP II

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<p>IS43R86400F-5TLI is a synchronous dynamic random access memory (SDRAM) device from the ISSI\'s IS43 family. It is a 2M x 8 memory device with a synchronous interface which is organized as 512K words by 4 bits. The bus cycles are organized as 72-bits across 8 banks and with 36 bit-words/bank, providing a total memory cell capacity of 8M bits. Additionally, the memory device offers enhanced burst transfers for improved performance.</p><h3>Application Field</h3><p>IS43R86400F-5TLI can be utilized in a wide range of applications, such as servers, workstations, network processing, desktops, notebooks, embedded-controller designs, communications systems, and battery-powered applications. It is designed to deliver high performance and increases memory bandwidth while offering low power consumption.</p><h3>Working Principle</h3><p>The IS43R86400F-5TLI is a highly versatile memory device, featuring a synchronous burst architecture which allows for fast throughput rates. The physical interface between the device and its external bus is provided by the 72-bit output data bus, 36-bit data bus length, and a 36-bit address bus.</p><p>The device has been optimized to minimize power consumption and maximize performance. It features a power-down mode that reduces active power when refresh commands are not available, as well as an auto-refresh function, which is controlled by an internal refresh counter and serves to keep valid data in storage even when no external refresh commands are sent.</p><p>In addition, the IS43R86400F-5TLI supports a self-timed burst interface that allows it to accept successive bursts of three, four, or eight data words without requiring additional clock cycles. This ensures that successive bursts are initiated in a predictable and predictable manner, resulting in improved performance and enhanced system throughput.</p>

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