Allicdata Part #: | 706-1656-ND |
Manufacturer Part#: |
IS43TR16512B-125KBL |
Price: | $ 16.77 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 8G PARALLEL 96FBGA |
More Detail: | SDRAM - DDR3 Memory IC 8Gb (512M x 16) Parallel 80... |
DataSheet: | IS43TR16512B-125KBL Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 15.24600 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3 |
Memory Size: | 8Gb (512M x 16) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.425 V ~ 1.575 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 96-TFBGA |
Supplier Device Package: | 96-TWBGA (10x14) |
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The IS43TR16512B-125KBL is a very versatile memory device and has a wide range of applications. It is used in many differing applications including industrial computers, embedded systems and automotive electronics. It is a dynamic random access memory (DRAM) device which derives its name from the technology employed to store and access data. The IS43TR16512B-125KBL is a 16Mbit dynamic RAM device that operates at 125MHz and has an access time of 12 ns.
The IS43TR16512B-125KBL is constructed using a variety of technologies including, CMOS (Complimentary Metal Oxide Semiconductor), and MOSFETs (Metal Oxide Semiconductor Field Effect Transisters). The DRAM Chip has the capability to store and access 16 Mb of data which is divided into 4M bits of data in 1K rows and 4K columns. The device is packaged in an 84-pin TSOP package with standard electrical properties and thermal characteristics.
The device has a number of features designed to improve its performance and reliability. These include burst operation, auto refresh capability, self-refresh mode and write protect. The device also features multiple power down modes, on die ECC (Error Correcting Code) and an on-chip temperature sensing diode.
The working principle behind the IS43TR16512B-125KBL is based on the charge stored in the device. When the device is exposed to an electric field, the charge is stored within the device. This charge is stored in what is called a capacitor which is composed of two metal plates separated by an insulating layer. When a voltage is applied to the plates, electrons from one plate are attracted to the other and a charge is stored in the capacitor.
The IS43TR16512B-125KBL is capable of reliably storing and retrieving 16 Mb of data at 125 MHz and with a 12 ns access time. This device has been designed to be used in a wide range of applications including industrial computers, embedded systems and automotive electronics.
In conclusion, the IS43TR16512B-125KBL is a very versatile memory device and is capable of being used in a variety of applications. It is constructed using a variety of technologies and has features designed to improve its performance and reliability. The device operates on the principle of storing a charge in a capacitor and can reliably store and retrieve 16 Mb of data at 125 MHz and with a 12 ns access time.
The specific data is subject to PDF, and the above content is for reference
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IS43LD32320C-25BLI | ISSI, Integr... | -- | 84 | IC DRAM 1G PARALLEL 134TF... |
IS43TR85120A-125KBLI | ISSI, Integr... | -- | 68 | IC DRAM 4G PARALLEL 78TWB... |
IS43DR16128C-3DBLI | ISSI, Integr... | -- | 34 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR16128C-25DBLI | ISSI, Integr... | -- | 27 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR82560C-25DBLI | ISSI, Integr... | 14.84 $ | 50 | IC DRAM 2G PARALLEL 60TWB... |
IS43TR16128C-15HBLI | ISSI, Integr... | -- | 190 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16128B-25EBL | ISSI, Integr... | 15.23 $ | 137 | IC DRAM 2G PARALLEL 84TWB... |
IS43R16160F-6BLI | ISSI, Integr... | 4.68 $ | 29 | IC DRAM 256M PARALLEL 60T... |
IS43TR81280BL-125JBLI | ISSI, Integr... | 6.95 $ | 50 | IC DRAM 1G PARALLEL 78TWB... |
IS43TR82560BL-125KBLI | ISSI, Integr... | 9.32 $ | 39 | IC DRAM 2G PARALLEL 78TWB... |
IS43LR32640A-6BL | ISSI, Integr... | 11.91 $ | 50 | IC DRAM 2G PARALLEL 90WBG... |
IS43LR32640A-6BLI | ISSI, Integr... | 13.1 $ | 50 | IC DRAM 2G PARALLEL 90WBG... |
IS43R16160D-6TL | ISSI, Integr... | -- | 1595 | IC DRAM 256M PARALLEL 66T... |
IS43DR16640C-25DBL | ISSI, Integr... | -- | 942 | IC DRAM 1G PARALLEL 84TWB... |
IS43TR16640B-125JBL | ISSI, Integr... | 3.34 $ | 364 | IC DRAM 1G PARALLEL 96TWB... |
IS43TR16640BL-125JBL | ISSI, Integr... | 3.44 $ | 479 | IC DRAM 1G PARALLEL 96TWB... |
IS43TR16128B-15HBL | ISSI, Integr... | 4.31 $ | 152 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16640B-3DBLI | ISSI, Integr... | -- | 2630 | IC DRAM 1G PARALLEL 84TWB... |
IS43TR85120AL-125KBL | ISSI, Integr... | -- | 219 | IC DRAM 4G PARALLEL 78TWB... |
IS43DR16640B-25DBLI | ISSI, Integr... | -- | 755 | IC DRAM 1G PARALLEL 84WBG... |
IS43TR16128CL-125KBLI | ISSI, Integr... | -- | 556 | IC DRAM 2G PARALLEL 96TWB... |
IS43TR16128B-125KBLI | ISSI, Integr... | -- | 340 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16128B-25EBLI | ISSI, Integr... | -- | 26 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR16640B-25DBL | ISSI, Integr... | -- | 432 | IC DRAM 1G PARALLEL 84WBG... |
IS43R16160D-6BL | ISSI, Integr... | 5.26 $ | 9 | IC DRAM 256M PARALLEL 60T... |
IS43TR16128B-125KBL | ISSI, Integr... | -- | 389 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16320E-3DBLI | ISSI, Integr... | 5.08 $ | 1000 | IC DRAM 512M PARALLEL 84T... |
IS43TR16512B-125KBL | ISSI, Integr... | 16.77 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
IS43TR16512B-125KBLI | ISSI, Integr... | -- | 1000 | IC DRAM 8G PARALLEL 96FBG... |
IS43TR16512BL-125KBL | ISSI, Integr... | -- | 1000 | IC DRAM 8G PARALLEL 96FBG... |
IS43TR16512BL-125KBLI | ISSI, Integr... | -- | 2411 | IC DRAM 8G PARALLEL 96FBG... |
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