IS43TR81280B-107MBL-TR Allicdata Electronics
Allicdata Part #:

IS43TR81280B-107MBL-TR-ND

Manufacturer Part#:

IS43TR81280B-107MBL-TR

Price: $ 4.82
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 1G PARALLEL 78TWBGA
More Detail: SDRAM - DDR3 Memory IC 1Gb (128M x 8) Parallel 933...
DataSheet: IS43TR81280B-107MBL-TR datasheetIS43TR81280B-107MBL-TR Datasheet/PDF
Quantity: 1000
2000 +: $ 4.37795
Stock 1000Can Ship Immediately
$ 4.82
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)
Description

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Memory: IS43TR81280B-107MBL-TR Application Field and Working Principle

IS43TR81280B-107MBL-TR is a state-of-the-art memory solution that can be used in a variety of applications. It is a high-speed, high-density dynamic random access memory (DRAM) unit that can store up to 8 Gigabits of data. This memory unit is ideal for use in applications such as PCs, interactive television systems, graphics accelerators, and embedded systems.

IS43TR81280B-107MBL-TR is a memory device that consists of eight different DDR4 DRAM devices, each with a data width of 64 bits. This adds up to a total data width of 512 bits, which makes it capable of supporting high data throughput rate. In addition, it supports speeds up to 3200MT/s, making it a great choice for applications such as PC and PC gaming systems.

The IS43TR81280B-107MBL-TR memory has a 32-bit address bus that allows for addressing up to 4 GB of memory. The built-in memory controller supports various memory configurations, such as single- and double-sided, as well as single- and double-buffered. Additionally, the dual-channel operation of the memory device allows for high memory bandwidth.

The working principle of IS43TR81280B-107MBL-TR is based on the concept of DRAM. DRAM is a type of memory storage device that stores information in the form of electrical charges. The memory cells in the device contain a “charge” that represents a binary bit — either a 0 or 1 — when the device is activated. The amount of charge stored in a memory cell, or “bit line”, determines the value stored in that memory cell.

The working principle of the IS43TR81280B-107MBL-TR also involves a process called “read-modify-write” (RMW). This procedure allows the user to access data in memory cells and then to modify that data in the same transaction. This helps to increase the speed of operations and make the memory device more efficient. Additionally, this RMW process requires less energy consumption than a traditional static RAM (SRAM) device.

In summary, IS43TR81280B-107MBL-TR is a high-density, high-speed memory solution that is ideal for use in a variety of applications. It has a 32-bit address bus, supports up to 3200MT/s speeds, and has a data width of 512 bits. The device also supports various configurations of single- and double-sided, and single- and double-buffered memory. Additionally, the working principle of the device involves the concept of DRAM, as well as a read-modify-write procedure. This allows for maximum data throughput rate and energy efficiency.

The specific data is subject to PDF, and the above content is for reference

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