IS66WVE4M16EALL-70BLI-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	PSRAM
Technology:	PSRAM (Pseudo SRAM)
Memory Size:	64Mb (4M x 16)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFBGA
Supplier Device Package:	48-TFBGA (6x8)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MemoryThe IS66WVE4M16EALL-70BLI-TR is a type of memory chip used in various devices and computing applications. It is a high-speed synchronous dynamic random access memory (SDRAM) chip that helps to improve the efficiency of data storage and retrieval for many applications.The use of this chip is wide-ranging. It is primarily used in high-performance computing devices such as servers, network devices, and routers, where fast and reliable data storage and retrieval is essential. It is also used as a part of smart appliances, as well as in some gaming consoles. Additionally, it is found in personal computers, tablets, and smartphones.The IS66WVE4M16EALL-70BLI-TR is built on a 70 nm process geometry and is constructed using an advanced semiconductor material called silicon-on-insulator (SOI). This type of material provides a number of benefits, including the ability to operate at higher speeds and greater power efficiency. The chip is designed to operate between 1.2 and 1.8 volts and offers high-density integrated memory arrays.In terms of its design, the IS66WVE4M16EALL-70BLI-TR has a series of 2-bit macrocells, which are allocated in rows and columns. The macrocells store the actual data which is transferred between memory locations. The chip also houses a number of control lines that are used to pass commands and status information to the memory components.As the data is written to the macrocells, it is read through the so-called “page mode”, which uses a special clock that is generated within the chip. This clock is used to ensure that the memory cells are synchronized and the data can be accessed without any delays or errors. By synchronizing the clock with the data, the chip can operate at its maximum speed.The IS66WVE4M16EALL-70BLI-TR is also designed with error correction code (ECC) capability. This important feature helps to detect errors that can occur during the writing and reading of data, and then correct them before the data is used.Overall, the IS66WVE4M16EALL-70BLI-TR is a advanced and reliable memory chip that is suitable for a range of computing applications. It provides modern devices with fast and error-free access to data, making them more efficient and reliable.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description