IS66WVE4M16BLL-70BLI Allicdata Electronics
Allicdata Part #:

IS66WVE4M16BLL-70BLI-ND

Manufacturer Part#:

IS66WVE4M16BLL-70BLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC PSRAM 64M PARALLEL 48TFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Paral...
DataSheet: IS66WVE4M16BLL-70BLI datasheetIS66WVE4M16BLL-70BLI Datasheet/PDF
Quantity: 7
Stock 7Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)
Description

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IS66WVE4M16BLL–70BLI: Memory

Memory refers to a computer\'s internal storage of information, programs, and processes. The IS66WVE4M16BLL–70BLI is a type of memory integrated circuit from Intersil Corporation. It is a low-power random access memory (RAM) device that is used in a variety of applications.

Application Field

The IS66WVE4M16BLL–70BLI is used in many applications due to its low-power consumption, high-speed operation, and wide temperature range. It is commonly found in mobile devices, such as cell phones, media players, and PDAs, where low-power consumption and high-speed operation are essential. It is also used in gaming systems, where its wide temperature range is beneficial.

The IS66WVE4M16BLL–70BLI is used in medical imaging applications due to its low-power consumption and high-speed operation. It is also used in industrial robotics applications because of its wide temperature range and ability to access data quickly. Additionally, the memory device is used in consumer electronic products such as digital cameras, music players, and home appliances.

Working Principle

The IS66WVE4M16BLL–70BLI operates using Dynamic Random Access Memory (DRAM) technology. DRAM uses a capacitor as storage cells that store data as electric charges, which are then read as binary values 0 and 1. When a capacitor holds a charge, it stores “1”, when not it stores “0”. The capacitor needs to be recharged periodically, known as refreshing the DRAM cell, in order for the binary value to be retained.

The IS66WVE4M16BLL–70BLI uses a single capacitor and two field-effect transistors (FETs) to store data. The two FETs in the device are used to read and write the data to the capacitor. The device uses a 6T (6 transistor) circuit design that allows it to operate quickly and consumes less power than many other types of DRAMs.

The IS66WVE4M16BLL–70BLI operates at a maximum frequency of 133 MHz and has a refresh rate of 4K or 7.8 us. It features typical access times of 10 ns and uses the LVTTL (Level Variable TTL) logic to read and write data to the DRAM cell. The device offers a low operating voltage, making it ideal for mobile devices and consumer electronics.

Conclusion

The IS66WVE4M16BLL–70BLI is a type of memory integrated circuit from Intersil Corporation that is commonly used in mobile devices, industrial robots, and consumer electronics due to its low power consumption, high speed operation, and wide temperature range. It operates using Dynamic Random Access Memory (DRAM) technology and features a 6T circuit design that allows it to operate quickly with low power consumption. The device operates at a maximum frequency of 133 MHz and has a refresh rate of 4K or 7.8 us. It features typical access times of 10 ns and uses the LVTTL (Level Variable TTL) logic to read and write data to the DRAM cell.

The specific data is subject to PDF, and the above content is for reference

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