IS66WV51216EBLL-55BLI-TR Allicdata Electronics

IS66WV51216EBLL-55BLI-TR Integrated Circuits (ICs)

Allicdata Part #:

IS66WV51216EBLL-55BLI-TR-ND

Manufacturer Part#:

IS66WV51216EBLL-55BLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC PSRAM 8M PARALLEL 48TFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 8Mb (512K x 16) Para...
DataSheet: IS66WV51216EBLL-55BLI-TR datasheetIS66WV51216EBLL-55BLI-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 8Mb (512K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)
Description

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The IS66WV51216EBLL-55BLI-TR is a type of memory device. It is used in a wide range of applications, including computers, electronic appliances, medical devices, and automotive systems, among many other applications. It is a quick, cost-effective solution for storing data in volatile memory. The device is built using Voltron technology, which enables fast read, write, and erase operations.

The IS66WV51216EBLL-55BLI-TR is a 512Mbit single-in-line memory module (SIMM) with an integrated static random-access memory (SRAM) controller. The device is manufactured using a 0.55 micron process, and consists of a 4M x 16 bit SRAM embedded array and 8-bit microprocessor interface. The device also includes an internal voltage regulator and a 10-bit cyclic redundancy check (CRC) engine.

The main working principle of the device is that it stores data in volatile memory, meaning that the data is only saved temporarily until the power is removed. When power is applied, the device will load the data into the 8-bit microprocessor interface. The 8-bit microprocessor interface then relays the data to the 4M x 16 bit SRAM embedded array, which stores the data. When data is written to the SRAM, an internal voltage regulator will maintain the correct power levels for the SRAM. The device is capable of storing up to 2GB of data, and it is capable of read, write, and erase operations at speeds of up to 15ns.

The IS66WV51216EBLL-55BLI-TR is a robust, reliable device that is capable of providing quick, cost-effective solutions for storing data in volatile memory. It is used in a wide range of applications, including computers, electronic appliances, medical devices, and automotive systems, among many others. The device is built using Voltron technology, which enables fast read, write, and erase operations. The device is capable of storing up to 2GB of data, and it is capable of read, write, and erase operations at speeds of up to 15ns. Furthermore, an internal voltage regulator and a 10-bit cyclic redundancy check engine provides improved reliability and security.

The specific data is subject to PDF, and the above content is for reference

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