IS66WV51216DBLL-70TLI-TR

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Modern technology makes memories of unprecedented performance, density, reliability and flexibility available. The IS66WV51216DBLL-70TLI-TR is a terrific example. It brings a high performance, cost-effective memory solution to microcontroller and microprocessor applications.

Uses

This device is DRAM that can be used as a main memory, cache memory, or used in embedded applications. It is optimized for both industrial and consumer applications and is particularly suitable for PC gaming, enterprise server applications, and other industry applications. It has long-term data retention and low latency, making it perfect for these types of environments.

Design

At the heart of the IS66WV51216DBLL-70TLI-TR is a 4Mb density Asynchronous CMOS DRAM in the industry-standard SOJ package. The device contains eight 512Kb modules and has an average random access time of 90ns. It is a 3.3V fast page mode device, meaning that data can be quickly accessed and written to the device without waiting for a page to be precharged.

The IS66WV51216DBLL-70TLI-TR is self-refreshing, allowing it to operate at low power. The refresh cycle is preprogrammed and the refresh rate can be changed on the fly. Additionally, the device supports column address strobe (CAS) latency of 1, 1.5, and 2 cycles, allowing it to transition quickly between read and write operations.

Timing

The IS66WV51216DBLL-70TLI-TR supports two different types of timing, both asynchronous and synchronous. For asynchronous operations, the device supports a write latency of 0, 1, 2, and 3 cycles. For synchronous operations, the device supports a write latency of 0, 1, and 2 cycles. It also supports a burst length of 1,2, 3, and 4 cycles. This allows the device to achieve high performance, while also minimizing power consumption.

Burst Modes

The IS66WV51216DBLL-70TLI-TR supports multiple burst modes, which can be used to increase the memory’s performance. The burst length and burst type can be changed on the fly, allowing for faster access to the device’s memory. The burst types supported by the device are single access, burst access, burst wrap, and continuous access. These burst modes enable the device to transition quickly between read and write operations, increasing its performance.

Power Consumption

The IS66WV51216DBLL-70TLI-TR is designed to be power efficient. The current consumption of the device is 1.5A at 3.3V. This low power consumption helps to reduce heat dissipation in embedded applications. Additionally, the device is capable of automatically entering a low power mode when accessed infrequently, helping to conserve even more power.

Conclusion

In conclusion, the IS66WV51216DBLL-70TLI-TR is an excellent memory device. It is versatile and flexible, offering features such as burst modes and low power consumption. The device is well-suited for PC gaming and other industry applications, making it the perfect choice for high performance and cost-effective memory solutions.

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