IS66WV51216DBLL-55BLI Allicdata Electronics
Allicdata Part #:

IS66WV51216DBLL-55BLI-ND

Manufacturer Part#:

IS66WV51216DBLL-55BLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC PSRAM 8M PARALLEL 48BGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 8Mb (512K x 16) Para...
DataSheet: IS66WV51216DBLL-55BLI datasheetIS66WV51216DBLL-55BLI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 8Mb (512K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-BGA (6x8)
Description

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The IS66WV51216DBLL-55BLI is a type of memory that is used in a variety of applications. It is a high speed, low voltage memory device with a relatively wide access time range. It has a fast write cycle time and a low power consumption when operating in standby mode. The IS66WV51216DBLL-55BLI has two types of memory: static and dynamic. The static memory provides a stable connection across the device that does not need refreshing, and the dynamic memory requires periodic refreshing. The IS66WV51216DBLL-55BLI is used in a wide range of applications, from medical imaging to communications, automotive, and aerospace. It is ideal for applications requiring low energy use and fast access times, such as data storage, image processing, networking, digital signal processing, navigation systems, voice recognition, video surveillance, and more.The IS66WV51216DBLL-55BLI works on a simple principle. It stores data in a matrix consisting of rows and columns, which are referred to as pins. Each row and column pair is referred to as a bit cell. The device reads data from the bit cell by applying a reference voltage to each column and measuring the response. Each time a reference voltage is applied, the bit cell state is stored in an internal register, which is then read out when instructed by the user.The IS66WV51216DBLL-55BLI has a wide range of features, including advanced error-correction techniques, hot swapping of memory devices during operation, and data protection. It is designed with a multiple level security feature, making it one of the safest devices for storing data. The device has two modes of operation, static and dynamic.In static mode, the IS66WV51216DBLL-55BLI stores data in a SRAM buffer. This data is retained even after the power is turned off, enabling the information to be immediately retrieved. In dynamic mode, the data is written and stored on a dynamic memory device, which needs to be periodically refreshed. This mode is more reliable for storing larger amounts of data for extended periods of time.The IS66WV51216DBLL-55BLI also features advanced error-correction techniques to ensure the accurate retrieval of data. A built-in CRC-16 feature allows the device to detect and correct errors that may have occurred in the process of storing or reading data. Additionally, the device can prevent data loss should it experience a power failure. The IS66WV51216DBLL-55BLI is an ideal choice for a wide range of applications and is designed to offer enhanced performance and reliability. With its advanced error-correction and power safety features, the device is the perfect solution for storing data safely and quickly. Its wide access time range and low-power consumption make it ideal for applications requiring fast access time and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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