IXFB100N50Q3

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The IXFB100N50Q3 is a trench gate Field Effect Transistor (FET) with a Single type build. It has an easy to use drain source voltage with an operating temperature range of -55°C to 175°C. Its drain source on state resistance is a low 100 milliohm. The IXFB100N50Q3 single FET is used for various applications, including motor control, circuit protection, switching and signal transmission. It can be used for low power applications such as space and ship devices, notebook and laptop computers, battery operable devices, and in gaming consoles.

The IXFB100N50Q3 is a single FET with a 9-lead plastic TO-252 package. The device is made with a silicon dioxide insulation and is also avaliable in a TO-251AA 7-lead package. The FET is a N-type MOSFET and can be used in both P and N version. The IXFB100N50Q3 has a drain to source voltage Vds of 80V, and is rated for continuous drain current Id of 50A, putting it at the top of single FET performance.

The IXFB100N50Q3 FET can handle up to 160A of pulsed peak drain current, making it ideal for use in high power switching applications. It is also capable of switching power supplies, motor systems and other high power devices. It can be used in DC to DC converters, motor drive and other motor control applications. The IXFB100N50Q3 has a capability of high frequencies, making it perfect for switching and signal transmission.

The IXFB100N50Q3 works by creating an electric field within its insulated gate and between the drain and gate. The electric field causes a charge within the drain, and when a suitable gate voltage is applied, it allows current through the MOSFET. The IXFB100N50Q3 can be used in both enhancement mode and depletion mode, giving users the flexibility of when to turn it on and off. It also provides stable performance even when the temperature rises or falls outside of the operating temperature range.

The IXFB100N50Q3 has a low drain to source on state resistance of 100 milliohms and is perfect for power conversion duties. It also comes with a built-in soft start circuitry that helps reduce switching surges, thus adding a layer of protection to your circuits. The IXFB100N50Q3 FET also comes with a built-in thermal shutdown to protect the device from high temperatures.

The IXFB100N50Q3 single FET is a great choice for applications that require a high performance device that is reliable and stable. It provides excellent power conversion, switching and signal transmission capabilities, and is suitable for both low power and high power applications. The IXFB100N50Q3 has a wide operating temperature range, making it perfect for use in extreme conditions. With its low drain to source on state resistance of 100 milliohms and built-in protective features, the IXFB100N50Q3 is a superior single FET for your projects.

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