Introduction

The IXFB90N85X is an enhancement mode MOSFET with a product breakdown voltage of 90 V and a drain current of 500 mA. The device is such that it will provide the user with a wide range of options for the application of the device. The IXFB90N85X is specifically a very low threshold Voltage MOSFET, which makes it very suitable to be used in Low voltage switching circuits.

Application Field

It has a variety of applications where a low threshold voltage is needed as well as quick switching. Some of these applications include high frequency switching, battery powered electronic systems, RF power amplifiers, switches, audio amplifiers, LCD chargers, PLLs, switching regulators, and many more. The device provides superior performance with a low RDS(ON).

Working principle

The IXFB90N85X works on Enhancement mode as it has JFET characteristics. The device operates at a low voltage, allowing it to be used in battery powered applications. The IXFB90N85X has a low threshold voltage, which makes it suitable for low frequency applications.

The device has a thin oxide layer on its drain and source, which helps to maintain and improve the conduction capability of the device. The oxide layer is made up of a hydrophobic material which prevents the oxidation of the drain and source. This allows a very low voltage to be applied to the device, with minimal current leakage.

Conclusion

In conclusion, the IXFB90N85X is a great device for applications where low voltage switching is needed and superior performance with a low RDS(ON) is desired. The device provides superior performance with a low threshold voltage and a thin oxide layer on its drain and source for minimal current leakage.