IXFB70N60Q2 Allicdata Electronics
Allicdata Part #:

IXFB70N60Q2-ND

Manufacturer Part#:

IXFB70N60Q2

Price: $ 26.87
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 70A PLUS264
More Detail: N-Channel 600V 70A (Tc) 890W (Tc) Through Hole PLU...
DataSheet: IXFB70N60Q2 datasheetIXFB70N60Q2 Datasheet/PDF
Quantity: 295
1 +: $ 26.87000
10 +: $ 26.06390
100 +: $ 25.52650
1000 +: $ 24.98910
10000 +: $ 24.18300
Stock 295Can Ship Immediately
$ 26.87
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: PLUS264™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 890W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 88 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFB70N60Q2 is a MOSFET type of transistor which comes in single form. This type of transistor is widely used in many applications courtesy of its wide range of benefits. In this article, we will discuss the application field and working principle of IXFB70N60Q2.

To begin with, IXFB70N60Q2 MOSFET is mainly used in the field of conversion and switching applications. It can be used as switches and converters in power supplies due to its capability of carrying a large current. It is also ideal for electronic controllers and motor drives, due to its fast switching times. Furthermore, it is widely used in high power applications, such as voltage regulation and power switching. Finally, it is used in various analog and digital circuits, such as logic gates and comparators.

Additionally, IXFB70N60Q2 MOSFETs are in widespread usage for their capacity to switch a large amount of current. This type of transistor is capable of operating at high voltage and current, making it well suited for high power applications. It is also attractive for use in low frequency power transmission, due to its good signal to noise ratio between the gate and source. Moreover, it possess an extremely low on-state resistance, allowing a minimal current leakage. This makes it very compact and efficient, allowing it to be used in devices such as mobile phones.

Now let us discuss the working principle of IXFB70N60Q2 MOSFET. These devices operate by allowing the flow of current between source and drain when the gate voltage is applied. It is an n-type MOSFET, which basically means that electrons are gonna flow through when the gate is open. The gate-source voltage must be greater than a specific threshold voltage for the current to begin flowing. The channel resistance between the source and drain can be controlled by varying the gate-source voltage, thus regulating the current.

In conclusion, IXFB70N60Q2 is a single-type of MOSFETs which is widely used in many applications. Its wide range of benefits make it ideal for applications such as voltage regulation and power switching. Moreover, the IXFB70N60Q2 MOSFET is capable of controlling current with the variation of the gate-source voltage, thus allowing making them efficient and reliable. Therefore, IXFB70N60Q2 MOSFET it is a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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