
Allicdata Part #: | IXFB40N110Q3-ND |
Manufacturer Part#: |
IXFB40N110Q3 |
Price: | $ 27.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1100V 40A PLUS264 |
More Detail: | N-Channel 1100V 40A (Tc) 1560W (Tc) Through Hole P... |
DataSheet: | ![]() |
Quantity: | 35 |
1 +: | $ 25.25670 |
25 +: | $ 21.46760 |
100 +: | $ 19.95230 |
Vgs(th) (Max) @ Id: | 6.5V @ 8mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | PLUS264™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1560W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 1100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFB40N110Q3 FET is a low voltage, fast-switching application, N-Channel – Enhancement Mode FET (Field Effect Transistor) featuring a low on-resistance of 8.8ohms, low Rdson value of 6.4mohms, and a low gate threshold voltage of 1.2V. It is designed to handle current ratings of up to 16amps, and has a maximum voltage rating of 600V. The IXFB40N110Q3 FET is designed for high speed optical applications like LED lighting, LED lighting controllers, and optical communications. It is also suitable for use in power converters, power supplies, and other DC/DC power circuits where high speed switching is required.
The IXFB40N110Q3 is a single N-type MOSFET, meaning it has one gate, and is built on a silicon substrate. It is capable of supporting bidirectional operation, meaning that it is capable of switching both positive and negative voltages. It also has low input capacitance and drain-source resistance, which makes it ideal for high frequency switching applications. When the gate voltage is applied to the FET, charge carriers are attracted from the drain to the source, or are repelled from the source to the drain, thus modulating the current flow between the two, and turning the FET on and off.
The IXFB40N110Q3 is a great option for circuits that require high speed, low power consumption, and high reliability. With a low on-resistance and low gate threshold voltage, it is an ideal choice for applications that require fast switching, such as LED lighting controllers and power conversion circuits. Its drain-source resistance and input capacitance make it a great option for high frequency switching applications, as well. Conveniently, the IXFB40N110Q3 comes in a small SOT-323 package, making it easy to integrate into designs with limited space.
The IXFB40N110Q3 FET is a great option for applications that require a low voltage, fast switching FET. With low on-resistance and low input capacitance and drain-source resistance, it is ideal for high frequency switching applications such as LED lighting controllers, optical communication links, and power converter circuits. It also features a small size and low gate threshold voltage, making it easy to integrate into designs with limited space. With its low power consumption, high reliability, and fast switching speeds, the IXFB40N110Q3 FET is a great choice for any application that requires fast, low power switching.
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