| Allicdata Part #: | IXFB82N60P-ND |
| Manufacturer Part#: |
IXFB82N60P |
| Price: | $ 14.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 82A PLUS 264 |
| More Detail: | N-Channel 600V 82A (Tc) 1250W (Tc) Through Hole PL... |
| DataSheet: |  IXFB82N60P Datasheet/PDF |
| Quantity: | 1000 |
| 25 +: | $ 12.85860 |
| Vgs(th) (Max) @ Id: | 5V @ 8mA |
| Package / Case: | TO-264-3, TO-264AA |
| Supplier Device Package: | PLUS264™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 23000pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
| Series: | HiPerFET™, PolarHT™ |
| Rds On (Max) @ Id, Vgs: | 75 mOhm @ 41A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 82A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFB82N60P is a high voltage field-effect transistor (FET) which was specifically engineered for use in motor control applications. This FET is suitable for driving small DC motors and can be used in both consumer and industrial applications.
Internally, the IXFB82N60P is a n-channel 60V power MOSFET. It has a low on-resistance rating of 82 mΩ, a fast switching speed and an operating current rating of 4A. The IXFB82N60P is designed to be able to withstand high voltages and high temperatures, making it an ideal component for industrial motor driver applications.
The working principle of the IXFB82N60P is basically the same as that of a regular power FET. In a FET, the voltage applied to a gate terminal controls the flow of current between the source and the drain terminals. This process is made possible by the creation of a conductive region between the source and drain, referred to as a channel.
The IXFB82N60P is able to withstand high voltage and high temperature operations due to its enhanced Gate Oxide Integrity (GOI) technology. This feature allows the MOSFET to maintain a low on-resistance value even in the presence of higher voltages and temperatures. As a result, the IXFB82N60P is ideal for applications that require low on-state resistance and fast switching performance.
The IXFB82N60P is an excellent choice for applications such as motor control, switching power supplies, DC-DC converters, and high power switching applications. Due to its superior power handling capabilities and robustness, the IXFB82N60P is the ideal component for industrial motor control applications.
The IXFB82N60P is a single-pole FET, meaning that it contains only one gate terminal, one source terminal and one drain terminal. Its unique combination of high Drain-Source breakdown voltage, low on-resistance, and fast switching capabilities make the IXFB82N60P an effective power FET, suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
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