IXFB82N60Q3

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IXFB82N60Q3 is a state-of-the-art insulated-gate field-effect transistor (IGFET) designed for use in multiple industrial and automotive electronic systems. It is part of a family of high-performance power MOSFETs offered by IXYS Corporation that has been designed for the fast and efficient transfer of current over a wide range of signal and load conditions.

As an insulated-gate device, IXFB82N60Q3 exhibits superior low on-resistance due to its super-junction structure. This super-junction structure utilizes a new fabrication process that combines both high breakdown voltage and low on-resistance, making it suitable for a wide variety of high- and medium-power applications.

IXFB82N60Q3 features low gate charge, fast switching, low on-resistance, high current handling capacity and a wide range of power configurations. The device also offers an impressive and reliable high temperature operating range (TJT) of up to 175 degrees Celsius and 175V breakdown voltage. All these characteristics make it one of the most widely used power MOSFETs available in the market.

IXFB82N60Q3 has a variety of applications, ranging from switching converters, motor drives, UPS systems, and high-efficiency power amplifiers, to automotive applications. It is especially suitable for high frequency switched-mode power supplies, high-frequency low-power conversion, and automotive systems. This makes it an excellent power switch and is one of the most preferred power MOSFETs in the market.

In terms of its working principle, IXFB82N60Q3 uses two insulated gates, a positive and a negative one, to control the flow of electrons between different electrodes. These gates act as an electronic switch, allowing the device to switch on and off and thus control the flow of electricity. When a positive voltage is applied to the positive gate terminal, it creates an attractive force on the holes and electrons within the channel, allowing them to move freely. This allows current to flow from the drain-source. Similarly, when a negative voltage is applied to the negative gate terminal, it creates a repulsive force on the holes and electrons, preventing them from moving freely and thereby blocking the current.

In conclusion, IXFB82N60Q3 is a versatile single-gate MOSFET with excellent switch characteristics. It offers high current handling capacity, low on-resistance, and wide range of power configurations. It can be used in a variety of high-powered applications in both industrial and automotive settings due to its fast switching rates and high temperature tolerance. Therefore, IXFB82N60Q3 is one of the most preferred insulated-gate power MOSFETs available in the market.

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