IXGH25N100A Allicdata Electronics
Allicdata Part #:

IXGH25N100A-ND

Manufacturer Part#:

IXGH25N100A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1000V 50A 200W TO247AD
More Detail: IGBT 1000V 50A 200W Through Hole TO-247AD (IXGH)
DataSheet: IXGH25N100A datasheetIXGH25N100A Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 5mJ (off)
Base Part Number: IXG*25N100
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 800V, 25A, 33 Ohm, 15V
Td (on/off) @ 25°C: 100ns/500ns
Gate Charge: 130nC
Input Type: Standard
Series: --
Power - Max: 200W
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Current - Collector Pulsed (Icm): 100A
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 1000V
IGBT Type: --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IXGH25N100A is an Insulated Gate Bipolar Transistor (IGBT) developed by Infineon Technologies that belongs to their renowned OptiMOS® series, their single-switch IGBT technology family. It is designed to switch high power with high efficiency levels and high volumes, making it suitable for applications such as inverters, motor drives, welding equipment, transportation, UPS systems, railway and traction, and solar inverters.The IXGH25N100A is a fast-switching transistor that supports voltages up to 1200V and currents up to 25A, featuring a maximum junction temperature of 175°C. It also has a low on-state voltage drop and a low saturation voltage, making it an ideal choice for high-power applications that require reduced losses and high efficiency.

The working principle of an IGBT is based on the principles of both a bipolar transistor and a field-effect transistor. An IGBT is basically composed of two transistors, an n-channel MOSFET connected in series with a p-channel MOSFET, as well as other device components such as a substrate, a drain and a gate. When a positive voltage is applied to the gate, electrons in the n-channel are pulled toward the gate, creating an inversion layer, and at the same time the holes in the p-channel are attracted to the gate, creating a further inversion layer. This effectively creates a layer-like structure that results in a unidirectional pathway, thereby allowing current to flow. The IXGH25N100A IGBT utilizes a optimized cell structure to achieve excellent gate drive, fast switching capabilities and low gate losses. It also features an integrated free-wheeling diode, making it an ideal choice for many applications such as motor drives, welding equipment, inverters, server and telecom power converters, and more. In addition to its excellent performance in terms of switching characteristics, the IXGH25N100A IGBT also offers improved junction temperature characteristics, making it suitable for a range of high-power applications. It also has built-in fault protection and temperature monitoring, making it an ideal choice for a range of industrial applications such as welding, traction, and motor control, to name a few.Overall, the IXGH25N100A IGBT is a versatile and reliable transistor that offers fast switching capabilities, high current ratings, and improved junction temperature characteristics, making it an ideal choice for a range of high-power applications. Its features also make it suitable for a range of industrial applications, from motor drives to inverters.

The specific data is subject to PDF, and the above content is for reference

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