IXGH32N170 Discrete Semiconductor Products |
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Allicdata Part #: | IXGH32N170-ND |
Manufacturer Part#: |
IXGH32N170 |
Price: | $ 13.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1700V 75A 350W TO247AD |
More Detail: | IGBT NPT 1700V 75A 350W Through Hole TO-247AD (IXG... |
DataSheet: | IXGH32N170 Datasheet/PDF |
Quantity: | 138 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 12.16530 |
10 +: | $ 11.06030 |
25 +: | $ 10.23070 |
100 +: | $ 9.40121 |
250 +: | $ 8.57171 |
Specifications
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 75A |
Current - Collector Pulsed (Icm): | 200A |
Vce(on) (Max) @ Vge, Ic: | 3.3V @ 15V, 32A |
Power - Max: | 350W |
Switching Energy: | 11mJ (off) |
Input Type: | Standard |
Gate Charge: | 155nC |
Td (on/off) @ 25°C: | 45ns/270ns |
Test Condition: | 1020V, 32A, 2.7 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXGH) |
Base Part Number: | IXG*32N170 |
Description
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IXGH32N170 Application Field and Working Principle
The IXGH32N170 is an IGBT-based single semiconductor module manufactured by Infineon. It is intended for use in applications requiring a low on-state voltage and high off-state voltage. It is used in a wide range of industries such as motor drives, power sources and inverters.This three-level module is composed of two individual discrete IGBTs. The IGBTs in this package have a higher blocking voltage and a lower operating temperature than other IGBT-based modules. Furthermore, they are well suited for high frequency applications such as resonance (PFC) circuits.In order to better understand the operation of the IXGH32N170, let\'s look at its basic operating principle. The two IGBTs in the IGH32N170 module are connected by bonding wires in a parallel configuration. This configuration creates an "on-state" voltage and an "off-state" voltage, which can be adjusted depending on the demands of the application.When the "on-state" voltage is reached, the IGBTs will conduct current. The current travels through the bonding wires until it reaches the load side. The current then dissipates as it flows across the load. At this point, the IGBTs are considered "on".When the current reaches the source side, it is then switched to the "off-state" by the IGBTs. At this point, the IGBTs are in their non-conducting state and the current will no longer flow through the wires.The IXGH32N170 is ideal for a variety of applications due its high performance and low on-state voltage. It can be used to control dc motors or other power supply or switch appliances. It is also widely used in applications such as wind turbines, solar cells, battery charging, and power generation.One of the biggest advantages of using the IXGH32N170 is its ability to reduce heat dissipation. This helps to ensure that the system operates at optimal temperature levels and provides maximum efficiency.The IXGH32N170 module is an effective and reliable power semiconductor module and is suitable for applications in many different industries. Its performance and low on-state voltage make it a popular choice for motor drives, power sources, and inverters. It is a valuable device for any application where high current and low voltage is required.The specific data is subject to PDF, and the above content is for reference
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