| Allicdata Part #: | IXGH6N170-ND |
| Manufacturer Part#: |
IXGH6N170 |
| Price: | $ 6.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | IGBT 1700V 12A 75W TO247 |
| More Detail: | IGBT NPT 1700V 12A 75W Through Hole TO-247AD (IXGH... |
| DataSheet: | IXGH6N170 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 6.27000 |
| 10 +: | $ 6.08190 |
| 100 +: | $ 5.95650 |
| 1000 +: | $ 5.83110 |
| 10000 +: | $ 5.64300 |
Specifications
| Power - Max: | 75W |
| Base Part Number: | IXG*6N170 |
| Supplier Device Package: | TO-247AD (IXGH) |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 1360V, 6A, 33 Ohm, 15V |
| Td (on/off) @ 25°C: | 40ns/250ns |
| Gate Charge: | 20nC |
| Input Type: | Standard |
| Switching Energy: | 1.5mJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 4V @ 15V, 6A |
| Current - Collector Pulsed (Icm): | 24A |
| Current - Collector (Ic) (Max): | 12A |
| Voltage - Collector Emitter Breakdown (Max): | 1700V |
| IGBT Type: | NPT |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
Description
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Transistors - IGBTs - Single
An IGBT, or insulated gate bipolar transistor, is a type of field effect transistor (FET) with an added internal isolation layer. Like other FETs, an IGBT controls the current between two electrodes. However, it combines both bipolar features, a gate and drain, into a single device. The IXGH6N170 is an IGBT module specifically designed for applications that need high switching frequencies, such as inverters and motor drives.IXGH6N170 Application Field
The IXGH6N170 IGBT Module is suited for high temperature, high frequency, and high power switch operation. It is optimized primarily for applications that require both high current and high switching speeds, such as high-power traction inverters, high-power motor drives, and high-voltage motor drives.The IXGH6N170 IGBT module has an excellent current and voltage balance and a low gate charge. This provides superior performance for switching applications, as the IGBT lacks the Miller plateau characteristics associated with MOSFETs and other FETs.It also has an operating temperature range of -40 to 125°C, making it an excellent choice for applications in extreme climate conditions or extreme temperatures. Additionally, the IXGH6N170 IGBT module is designed for low EMI (electromagnetic interference) and fast switching.IXGH6N170 Working Principle
The IXGH6N170 IGBT module uses the principle of unipolar switching. As the name implies, unipolar switching means that the current is conducted in one direction only, unlike in other technologies such as bipolar transistors, which require both a positive and a negative voltage for conduction. Unipolar switching simplifies the design of the IGBT module and improves its performance in terms of switching speed and switching efficiency.The operation of the IXGH6N170 IGBT module is governed by the relation between its energizing voltage and the current flowing through it. Generally, when the operating voltage is above the gate threshold, a current flows through the module. The current is primarily limited to the “off-state” by the presence of the positive charge in the gate, thus acted as a “gate resistor”, a feature called Gate Control.The primary benefit of Gate Control is that the current can be switched rapidly and accurately. By reducing the voltage across the Gate, the gate resistor releases the current and allow it to flow through the LEDs. This eliminates the need for heat sinks that are typically needed in traditional bipolar switching due to their slower speeds and higher losses.Furthermore, the IXGH6N170 IGBT module has a very low switching resistance (RDSon). This means that it can safely handle large current surges without causing thermal degradation in the circuit path. Additionally, it has an incredibly low gate-source voltage (Vgss), which permits the gate to be driven from a wide range of gate voltages. This makes it well-suited for applications in which the gate voltage may need to be adjusted to accommodate different operating conditions.Conclusion
The IXGH6N170 IGBT module offers numerous advantages for a wide range of applications. It is highly efficient, extremely reliable, and provides fast switching speeds. Additionally, it features a unipolar switching design, which simplifies the construction and improves its overall performance. Moreover, its low gate-source voltage and low switching resistance make it well-suited for high power, temperature, and frequency applications. Thus, the IXGH6N170 IGBT module is an excellent option for applications that need powerful yet accurate switching.The specific data is subject to PDF, and the above content is for reference
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IXGH6N170 Datasheet/PDF