IXGR60N60C2 Allicdata Electronics
Allicdata Part #:

IXGR60N60C2-ND

Manufacturer Part#:

IXGR60N60C2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 250W ISOPLUS247
More Detail: IGBT PT 600V 75A 250W Through Hole ISOPLUS247™
DataSheet: IXGR60N60C2 datasheetIXGR60N60C2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 250W
Base Part Number: IXG*60N60
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 50A, 2 Ohm, 15V
Td (on/off) @ 25°C: 18ns/95ns
Gate Charge: 140nC
Input Type: Standard
Switching Energy: 490µJ (off)
Series: HiPerFAST™
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Current - Collector Pulsed (Icm): 300A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGR60N60C2 is part of IXYS\'s family of ultrafast IGBTs, specifically categorized as a single IGBT. This device is used in a myriad of applications, ranging from motor control in renewable energy sources to power supplies, to help reduce the emission of harmful gases into the environment. The IXGR60N60C2 is a non-punch through IGBT that features a positive temperature coefficient, low on-state voltage drop, low switching losses, low noise performance, and a very low gate-charge Qg. The breakdown voltage for this IGBT is 600V, with a maximum collector current of 600A.

The IXGR60N60C2 is based on a p-n-p-n structure with a built-in antiparallel Emitter-Follower (E-F) diode, as well as an integrated Gate-Emitter capacitor. The device utilizes a standard voltage-driven gate, where an appropriate voltage, typically in the range of 10 to 15 volts, is applied to the gate to turn the device on and off. When current is passed through the gate, it biases the base-emitter junction and the Gate-Emitter capacitance begins to charge. This charge helps to reduce the amount of current needed to maintain the logic level of the gate; which improves the power efficiency of the application.

The cooling system of the IXGR60N60C2 is designed to ensure a proper working environment for the device. Heat dissipation is achieved through a copper cladding around the substrate, as well as through device design, which features direct coupled heat sinks. This improves the efficiency and power handling capabilities of the device significantly, allowing it to operate in high currents and temperature environments for extended periods of time.

One of the main advantages of the IXGR60N60C2 is its low switching losses. By utilizing two transistors and a diode, this IGBT effectively eliminates main circuit inductances, which reduce the amount of energy needed to switch on and off. This also reduces the amount of noise generated by the device; allowing it to be used in applications where noise is a major concern. Furthermore, the device has a relatively low on-state voltage drop, which further contributes to its efficiency.

The IXGR60N60C2 IGBT is a great choice for motor control in renewable energy sources, power supplies, and other applications where efficiency is a key factor. Its low switching losses, low noise performance, and low on-state voltage drop make it one of the most efficient IGBTs on the market. Furthermore, its an easy to use device with a simple gate drive voltage, making it a favorable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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