IXTX120P20T Allicdata Electronics
Allicdata Part #:

IXTX120P20T-ND

Manufacturer Part#:

IXTX120P20T

Price: $ 14.05
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 200V 120A PLUS247
More Detail: P-Channel 200V 120A (Tc) Through Hole PLUS247™-3
DataSheet: IXTX120P20T datasheetIXTX120P20T Datasheet/PDF
Quantity: 1000
30 +: $ 12.77220
Stock 1000Can Ship Immediately
$ 14.05
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: PLUS247™-3
Mounting Type: Through Hole
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
Series: TrenchP™
Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTX120P20T is a field-effect transistor, more specifically a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). These transistors are designed to control the flow of electric current in the integrated circuit and can be thought of as an electronic switch.

The IXTX120P20T is a single-gate MOSFET, meaning that it is capable of switching between two states. This transistor can be designed with a source, gate, and drain. When the gate is in a low voltage state, the drain-to-source current (IdS) is at a minimum and the resistance between the gate and the source is at a maximum. When the gate is supplied with a high voltage signal, the IdS increases, the resistance decreases, and the transistor is said to be in a “saturated” state.

The IXTX120P20T is generally used in applications related to power management, such as switching on and off power in automotive systems, UPS applications, and motor control systems. When used in these applications, the IXTX120P20T can help to greatly reduce power consumption, improve system efficiency, and increase system reliability. In addition to power management applications, the IXTX120P20T can also be used in industrial and instrumentation equipment, as well as high-speed digital communication systems.

When designing with the IXTX120P20T, designers must consider the maximum working voltage and continuous drain current. The IXTX120P20T has a maximum working voltage of 20V, which means that the voltage applied between the drain and source must never be higher than 20V. The IXTX120P20T can handle continuous drain currents up to 120A.

The IXTX120P20T is designed with a low drain to source capacitance and a high switching speed, which makes it an ideal choice for applications where fast switching and low energy consumption are required. The IXTX120P20T also features an integrated Schottky diode, which helps to protect the MOSFET from back biased voltages.

In summary, the IXTX120P20T is a single-gate MOSFET designed for power management applications such as automotive systems, UPS, motor control systems, instrumentation and high-speed digital communication systems. The IXTX120P20T has a maximum working voltage of 20V and can handle continuous drain currents up to 120A. This MOSFET has a low drain-to-source capacitance and a high switching speed, as well as an integrated Schottky diode for protection from back-biased voltages.

The specific data is subject to PDF, and the above content is for reference

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